Gallium arsenide Schottky barrier avalance diode array

• US 3,896,473 A
• Filed: 12/04/1973
• Issued: 07/22/1975
• Est. Priority Date: 12/04/1973
• Status: Expired due to Term

• Current Assignee: Daniel Leon Rode, James Vincent Dilorenzo, William Charles Niehaus
• Original Assignee: Daniel Leon Rode, James Vincent Dilorenzo, William Charles Niehaus
• Inventors: DiLorenzo, James Vincent, Niehaus, William Charles, Rode, Daniel Leon
• Primary Examiner(s): Larkins, William D.
• Application Number:
  US05/421,521
• Time in Patent Office: 595 Days
• Field of Search: 317/234H,234N,234W,234V,235AJ,235AK 357/3,55,56,69,75,76,15,13 331/17R,17G,17T
• US Class Current: 257/473
• CPC Class Codes: H01L 23/36 Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 25/03 all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
• CPC Class Codes: H01L 29/00 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00
• CPC Class Codes: H01L 29/864 Transit-time diodes, e.g. IMPATT, TRAPATT diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

Gallium arsenide power dissipating devices are described, which comprise an array of mesas formed on a plated heat sink in order to reduce thermal effects. The array is connected in parallel with beam leads to permit thermocompression bonding to only one of the mesas and thus reduce the number of bonding operations. Bonding stresses to the device may be eliminated by rendering one of the mesas inactive.

Claims

1. A SEMICONDUCTOR POWER DISSIPATING DEVICE CONSISTING OF AT LEAST THREE SEMICONDUCTOR BODIES, ARRANGED SYMMETRICALLY AROUND A CENTRALLY LOCATED INERT SEMICONDUCTOR BODY, ALL OF WHICH SEMICONDUCTOR BODIES ARE FABRICATED ON A PLANAR HEAT