Gallium arsenide Schottky barrier avalance diode array
First Claim
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1. A SEMICONDUCTOR POWER DISSIPATING DEVICE CONSISTING OF AT LEAST THREE SEMICONDUCTOR BODIES, ARRANGED SYMMETRICALLY AROUND A CENTRALLY LOCATED INERT SEMICONDUCTOR BODY, ALL OF WHICH SEMICONDUCTOR BODIES ARE FABRICATED ON A PLANAR HEAT
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Abstract
Gallium arsenide power dissipating devices are described, which comprise an array of mesas formed on a plated heat sink in order to reduce thermal effects. The array is connected in parallel with beam leads to permit thermocompression bonding to only one of the mesas and thus reduce the number of bonding operations. Bonding stresses to the device may be eliminated by rendering one of the mesas inactive.
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Citations
1 Claim
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1. A SEMICONDUCTOR POWER DISSIPATING DEVICE CONSISTING OF AT LEAST THREE SEMICONDUCTOR BODIES, ARRANGED SYMMETRICALLY AROUND A CENTRALLY LOCATED INERT SEMICONDUCTOR BODY, ALL OF WHICH SEMICONDUCTOR BODIES ARE FABRICATED ON A PLANAR HEAT
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