Sensing device

• US 3,914,309 A
• Filed: 12/26/1973
• Issued: 10/21/1975
• Est. Priority Date: 12/26/1973
• Status: Expired due to Term

• Current Assignee: Eugene T. Swensen
• Original Assignee: Eugene T. Swensen
• Inventors: Swensen, Eugene T.
• Primary Examiner(s): Lawrence, James W.
• Assistant Examiner(s): Grigsby, T. N.
• Application Number:
  US05/428,072
• Time in Patent Office: 664 Days
• Field of Search: 250/239,569,570,221,222R,578 235/61.11E
• US Class Current: 250/569
• CPC Class Codes: G01V 8/20 using multiple transmitters or receivers
• CPC Class Codes: G06K 7/10841 Particularities of the light-sensitive elements semiconductor devices H01L
• CPC Class Codes: H01L 31/12 structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto semiconductor devices with at least one potential barrier or surface barrier adapted for light emission H01L33/00; amplifiers using electroluminescent element and photocell H03F17/00; electroluminescent light sources per se H05B33/00

Abstract

A radiation sensing device including a radiation source and a detector disposed in-line within a package.

Claims

1. A DEVICE FOR SENSING RADIATION REFLECTED FROM A SURFACE. SAID RADICATION SENSING DEVICE COMPRISING A MICRO EMITTER FOR EMITTING A BEAM OF RADIATATION, A PHOTO TRANSISTOR FOR SENSING REFLECTED RADIATION SAID PHOTO TRANSISTOR BEING DISPOSED WITHIN THE DIRECT PATH OF SAID RADIATION BEAM, AND A TRANSPORT PACKAGE FOR CONTAINING SAID MICRO EMITTER AND SAID PHOTO TRANSISTOR, WHEREBY THE BEAM OF RADIATION MAY TRAVEL PAST THE PHOTO TRANSISTOR AND WHEN STRICKING A REFLECTIVE SURFACE IS REURNED TO THE PHOTO TRANSISTOR WHERE THE REFLECTED BEAM IS SENSED.

2. The sensing device of claim 1 wherein said device consists of a single unit transparent package, a gallium arsenide diode and a silicon wafer photo transistor.

3. The sensing device of claim 1 wherein the photo transistor casts a shadow while lying within said direct beam and wherein said photo transistor is positioned with respect to said micro emitter such that said shadow lies entirely within the package.

4. The radiation sensing device of claim 1 wherein said sensing device includes a single package containing a plurality of sensing sets, each sensing set consisting of a radiation emitter and a photo transistor.

5. The radiation sensing device of claim 4 wherein the emitter and the transistor of each set are in line.

6. The sensing device of claim 4 wherein said radiation emitter is a gallium arsenide diode.

7. The sensing device of claim 4 wherein said photo transistor is a silicon wafer.