Semiconductor rectifier arrangement

• US 3,918,084 A
• Filed: 11/19/1974
• Issued: 11/04/1975
• Est. Priority Date: 07/25/1973
• Status: Expired due to Term

• Current Assignee: Semikron Elektronik GmbH & Company KG (Heilbronner Holding GbR)
• Original Assignee: Winfried Schierz
• Inventors: Schierz, Winfried
• Primary Examiner(s): Mullins, James B.
• Application Number:
  US05/525,313
• Time in Patent Office: 350 Days
• Field of Search: 357/82 165/80
• US Class Current: 257/714
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor rectifier arrangement in which two rectifier wafers, at least one of which is controllable, are fastened to a cooling element which is provided with a through-opening for the passage of a coolant, i.e., a cooling channel. The cooling element comprises a flat metal base plate and a flat cover of an insulating material with good thermal conductivity which is fastened to the base plate. One of the two components of the cooling element is provided with a recess in the surface facing in the other component so as to form a cavity which is enclosed by both components and constitutes the cooling channel, and is additionally provided with connecting studs for the coolant lines. At least one areal section on the cover is provided at a small distance from the cooling channel and is covered with a metal intermediate layer which is subdivided into a plurality of layer portions and which is suitable for fastening the rectifier wafers. Each of the rectifier wafers is mounted on and permanently attached to one of said metal layer portions and has its upper connecting lead contacted by a conductor which is disposed on the adjacent metal layer portion. The structure including the cooling element, the rectifiers and the conductors are encapsulated in a mass of insulating material.

Claims

1. A SEMICONDUCTOR RECTIFIER ARRANGEMENT COMPRISING IN COMBINATION:

TWO SEMICONDUCTOR RECTIFIER WAFERS, AT LEAST ONE EF WHICH IS A CONTROLLABLE RECTIFIER, A COOLING ELEMENT WHICH IS PROVIDED WITH A COOLING CHANNEL FOR THE PASSAGE OF A LIQUID COOLANT AND ON WHICH SAID RECTIFIER ARE MOUNTED, SAID COOLING ELEMENT BEING FORMED OF TWO COMPONENTS WITH ONE OF SAID COMPONENTS BEING A FLAT METAL BASE BODY AND THE OTHER OF SAID COMPONENTS BEING A FLAT COVER OF AN INSULATING MATERIAL WITH GOOD THERMAL CONDUCTIVITY WHICH IS FASTENED TO THE UPPER SURFACE OF SAID BASE BODY, ONE OF SAID COMPONENTS BEING PROVIDED, IN THE SURFACE THEREOF WHICH ABUTTS THE OTHER OF SAID COMPONENTS, WITH A RECESS WHICH TOGETHER WITH THE ADJACENT SURFACE OF SAID OTHER COMPONENT FORMS SAID COOLING CHANNEL, MEANS FORMED IN SAID BASE BODY AND COMMUNICATING WITH SAID COOLING CHANNEL, A INTERMEDIATE METAL LAYER, WHICH IS SUBDICOOLING CHANNEL, AN INTERMEDIATE METAL LAYER, WHICH IS SUBDIVIDED INTO A PLURALITY OF LAYER PORTIONS, COVERING AT LEAST ONE AREAL SECTION OF THE UPPER SURFACE OF SAID COVER WHICH IS PROVIDED AT A SMALL DISTANCE FROM AND OVERALIES SAID COOLING CHANNEL, EACH OF SAID RECTIFIER WAFERS BEING MOUNTED ON AND HAVING ONE CONTACT SURFACE THEREOF PERMANENTLY ELECTRICALLY CONNECTED TO ONE OF SAID LAYER PORTIONS AND HAVING ITS OPPOSITE UPPER CONTACT SURFACE ELECTRICALLY CONNECTED TO A CONDUCTOR WHICH IS DISPOSED ON AN ADJACENT ONE OF SAID LAYER PORTIONS, AND A MASS OF AN INSULATING MATERIAL INCAPSULATING SAID CONDUCTORS, SAID RECTIFIER WAFERS AND SAID COOLING ELEMENT.

2. A semiconductor rectifier arrangement as defined in claim 1 wherein said base body is a solid flat metal plate and said cover is provided on its surface facing said base body with a groove-shaped recess constituting said cooling channel.

3. A semiconductor rectifier arrangement as defined in claim 1 wherein said recess is formed in said base body.

4. A semiconductor rectifier arrangement as defined in claim 3 wherein said base body is trough-shaped with partitions extending from its oppositely disposed end walls alternatingly into the interior of said base body to form barriers for the coolant and wherein said cover is a planar, disc-shaped cover.

5. A semiconductor rectifier arrangement as defined in claim 1 wherein said cover is made of a cermaic oxide.

6. A semiconductor rectifier arrangement as defined in claim 1 further comprising a contact plate of an electrically and thermally good conducting metal disposed between and electrically connecting each of said rectifier wafers to its associated said metal layer portion.

7. A semiconductor rectifier arrangement as defined in claim 6 wherein said cover is provided on its surface which is in communication with the coolant with a metallization with good thermal conductivity.

8. A semiconductor rectifier arrangement as defined in claim 1 wherein said metal layer portions provided on the surface of said cover for fastening the rectifier wafers and the conductors are arranged in parallel strips, each of which is subdivided into two separate sections, and wherein one of said sections of each strip accommodates the rectifier wafer and a conductor provided for making connection to its electrode, and the other section of each strip accommodates the said conductor connected to the upper contact surface of the associated rectifier wafer.