Nozzles formed in monocrystalline silicon
First Claim
Patent Images
1. A NOZZLE COMPRISING A NOZZLE BODY FORMED OF A SEMICONDUCTOR MATERIAL HAVING A RECTANGULAR ENTRANCE APERTURE OF A FIRST CROSS-SECTIONAL AREA WHICH TAPERS TO A SECOND CROSS-SECTIONAL AREA WHICH IS SMALLER THAN THE CROSS-SECTIONAL AREA OF SAID ENTRANCE APERATURE;
- AND A MEMBRANE OF SAID SEMICONDUCTOR MATERIAL FORMED WITHIN SAID SECOND CROSS-SECTIONAL AREA AND HAVING AN EXIT APERTURE FORMED THEREIN HAVING A SMALLER CROSS-SECTIONAL AREA THAN SAID SECOND CROSS-SECTIONAL AREA AND HAVING A DIFFERENT CROSS-SECTIONAL GERMETRY THAN SAID SECOND CROSS-SECTIONAL AREA.
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Abstract
Method for producing a predetermined pattern of small size fluid nozzles of identical or different geometries in crystallographically oriented monocrystalline silicon or similar material utilizing anisotropic etching through the silicon to an integral etch resistant barrier layer heavily doped with P type impurities.
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Citations
4 Claims
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1. A NOZZLE COMPRISING A NOZZLE BODY FORMED OF A SEMICONDUCTOR MATERIAL HAVING A RECTANGULAR ENTRANCE APERTURE OF A FIRST CROSS-SECTIONAL AREA WHICH TAPERS TO A SECOND CROSS-SECTIONAL AREA WHICH IS SMALLER THAN THE CROSS-SECTIONAL AREA OF SAID ENTRANCE APERATURE;
- AND A MEMBRANE OF SAID SEMICONDUCTOR MATERIAL FORMED WITHIN SAID SECOND CROSS-SECTIONAL AREA AND HAVING AN EXIT APERTURE FORMED THEREIN HAVING A SMALLER CROSS-SECTIONAL AREA THAN SAID SECOND CROSS-SECTIONAL AREA AND HAVING A DIFFERENT CROSS-SECTIONAL GERMETRY THAN SAID SECOND CROSS-SECTIONAL AREA.
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2. The combination claimed in claim 1 wherein said semiconductor material is monocrystalline silicon.
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3. The combination claimed in claim 2 wherein said exit aperture is substantially circular in cross-section.
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4. The combination claimed in claim 3 wherein said entrance aperture and said second cross-sectional area are substantially square in cross-section.
Specification