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Dielectrically isolated integral silicon diaphram or other semiconductor product

  • US 3,922,705 A
  • Filed: 11/27/1974
  • Issued: 11/25/1975
  • Est. Priority Date: 06/04/1973
  • Status: Expired due to Term
First Claim
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1. A DIELECTRICALLY ISOLATED INTEGRAL SILICON DIAPHRAGM COMPRISING A PRESSURE RESPONSIVE SINGLE CRYSTAL SILICON SUBSTRATE, A PATTERNED SILICON DIOXIDE LAYER HAVING AT LEAST ONE OPENING IN WHICH IS FORMED A SINGLE CRYSTAL SILICON STRAIN GAGE COMPNENT, SAID SINGLE CRYSTAL SILICON SUBSTRATE AND SAID PATTERNED SILICON DIOXIDE LAYER WITH A SINGLE CRYSTAL SILICON STRAIN GAGE COMPONENT BEING COMPLETELY DIELECTRICALLY ISOLATED AND BONDED TOGETHER WITH AT LEAST ONE OTHER INTERMEDIATE SILICON DIOXIDE INSULSTING LAYER AND ONE INTERMEDIATE GLASS BONDING LAYER, SAID GLASS BONDING LAYER CONSISTING ESSENTIALLY IN MOLE PERCENT OF 15-20 PERCENT BORIC OXIDE AND 80-85 PERCENT SILICON DIOXIDE, AND HAVING A THERMAL EXPANSION COEFFICIENT THAT APPROXIMATELY MATCHES THE THERMAL EXPANSION COEFFICIENT OF SILICON SAID SUBSTRATE BEING MADE OF N-TYPE SILICON, AND SAID GLASS BONDING LAYER HAVING A THICKNESS BETWEEN 0.5 AND 5 MICRONS

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