MOS DC Voltage booster circuit

• US 3,942,047 A
• Filed: 06/03/1974
• Issued: 03/02/1976
• Est. Priority Date: 06/03/1974
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Buchanan, John K.
• Primary Examiner(s): Grimm, Siegfried H.
• Application Number:
  US05/475,366
• Time in Patent Office: 638 Days
• Field of Search: 307/296, 307/297, 307/304, 307/303, 321/15
• US Class Current: 327/543
• CPC Class Codes: H02M 3/073 Charge pumps of the Schenkel-type

Abstract

A MOSFET voltage booster circuit generates a stepped up DC voltage from a lower magnitude supply voltage and a periodic input signal. A plurality of such MOSFET voltage booster circuits, which are formed only from components integrated in the MOSFET integrated circuit chip, may be formed on the chip near corresponding sections of circuitry requiring a high DC bias signal. A free-running oscillator circuit may provide the required periodic input signal.

Claims

1. A voltage booster circuit coupled to a supply voltage conductor including a first MOSFET coupled between said supply voltage conductor and a first node for charging capacitance associated with the first node, a capacitor coupled between the first node and a first clock signal conductor, and a first diode-connected MOSFET coupled between the first node and a second node, the voltage booster circuit comprising:

a second diode-connected MOSFET having its gate and drain coupled to said supply voltage conductor and its source coupled to said second node, and third and fourth diode-connected MOSFETS coupled in series between said second node and said supply voltage conductor, the source of said fourth diode-connected MOSFET being coupled to said supply voltage conductor, the gate and the drain of said third diode-connected MOSFET being coupled to said second node.

6. An integrated chip including at least one voltage booster circuit as recited in claim 1 coupled to supply voltage conductor means and distributing a stepped up voltage to a first portion of said integrated circuit chip.

7. The integrated circuit chip as recited in claim 6 further including another said voltage booster circuit coupled to said supply voltage conductor means for producing a second stepped up voltage to a second portion of said integrated circuit chip.

8. A voltage booster circuit as recited in claim 1 wherein said capacitor is an enhancement capacitor having its gate electrode coupled to said first node.

2. A voltage booster circuit, coupled to a supply voltage conductor, for producing a stepped up voltage comprising:

first field effect transistor load means coupled between said supply voltage conductor and a first node for charging capacitance associated with said first node;

capacitive voltage boosting means coupled to said first node and a first clock signal conductor for boosting a voltage on said first node;

diode-connected field effect transistor circuit means coupled between said first node and a second node for transferring charge from said first node to said second node to charge up the capacitance associated with said second node;

second field effect transistor load means for charging a third node coupled between said supply voltage conductor and said third node;

second capacitive voltage boosting means for boosting a voltage on said third node coupled between a second clock signal conductor and said third node; and

second diode-connected field effect transistor circuit means for transferring charge from said third node to said second node coupled between said third node and said second node.

3. The voltage booster circuit as recited in claim 2 further including first field effect transistor feedback load means for charging the voltage on said first node to the voltage on said supply voltage conductor means coupled between said supply voltage conductor means and said first node and also coupled to said third node and being responsive to the voltage on said third node, and second field effect transistor feedback load means for charging the voltage on said third node to the voltage on said supply voltage conductor means coupled between said supply voltage conductor means and said third node and also coupled to said first node and being responsive to the voltage on said first node.

4. A voltage booster circuit for producing a stepped up voltage at an output voltage node comprising:

first MOSFET load means for charging a first node coupled between supply voltage conductor means and said first node;

second MOSFET load means for charging a second node coupled between said supply voltage conductor means and said second node;

a first diode-connected MOSFET transistor coupled between said first node and said output voltage node;

a second diode-connected MOSFET transistor coupled between said second node and said output voltage node; and

first and second capacitors coupled, respectively, between said first node and a first clock signal conductor and said second node and a second clock signal conductor.

5. The voltage booster circuit as recited in claim 4 further including MOSFET regulator clamping circuit means coupled to said output voltage node for regulating the voltage at said output voltage node.

9. A voltage booster circuit for producing a stepped up voltage at an output voltage node comprising:

a load MOSFET coupled between supply voltage conductor means and a first node;

a second diode-connected MOSFET coupled between said supply voltage conductor means and the gate of said load MOSFET;

a bootstrap capacitor coupled between said first node and the gate of said load MOSFET;

a switching MOSFET coupled between said supply voltage conductor means and said first node having its gate coupled to clock signal conductor means;

a second diode-connected MOSFET coupled between the gate of said load MOSFET and said output voltage node.