Integrated semiconductor light-emitting display array

• US 3,947,840 A
• Filed: 08/16/1974
• Issued: 03/30/1976
• Est. Priority Date: 08/16/1974
• Status: Expired due to Term

• Current Assignee: Monsanto Company (Bayer AG)
• Original Assignee: Monsanto Company (Bayer AG)
• Inventors: Bailey, Paul T., Craford, Magnus George
• Primary Examiner(s): Trafton, David L.
• Application Number:
  US05/497,992
• Time in Patent Office: 592 Days
• Field of Search: 357/17, 357/45, 313/500, 358/59, 340/324 M
• US Class Current: 345/82
• CPC Class Codes: G09G 3/32 semiconductive, e.g. using light-emitting diodes [LED]
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 24/14 of a plurality of bump connectors
• CPC Class Codes: H01L 27/00 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate details thereof H01L23/00, H01L29/00 - H10K10/00; assemblies consisting of a plurality of individual solid state devices H01L25/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: Y10S 148/038 Diffusions-staged
• CPC Class Codes: Y10S 148/065 Gp III-V generic compounds-processing
• CPC Class Codes: Y10S 148/072 Heterojunctions
• CPC Class Codes: Y10S 148/099 LED, multicolor
• CPC Class Codes: Y10S 148/119 Phosphides of gallium or indium

Abstract

An integrated LED display array wherein light is emitted and observed through a light-transmissive substrate, i.e., single crystal, which carries a plurality of optically isolated LED assemblies. Scattering of light from individual assemblies is prevented by an optically absorbing doped region which optically isolates each assembly. Light is generated at the back of the single crystal and viewed through the crystal. The LED assemblies, preferably multicolor, are directly mated to energizing electronic circuitry, e.g., a monolithic integrated circuit, via appropriate interconnections sandwiched between the two. The energizing electronic circuitry comprise an array of circuit elements which provide the energizing currents for respective ones of the LED assemblies.

Claims

1. A composite integrated circuit LED display array comprising:

a light-transmissive monolithic planar substrate of a single III-V crystal including a plurality of LED devices carried in the body of said substrate and forming an array of LED devices, each of said LED devices being adapted when energized to emit light at the back surface of said substrate, said LED devices being optically isolated from one another, the optical isolation being affected by a light-absorbing doped region between said LED devices, said doped region being adapted to absorb light emitted by the individual LED devices, each of said LED devices being constituted by at least one diode having a separate p-n junction at which said light is radiated, said junction being at the back surface of said crystal, said light being transmitted through said crystal for being observed at the front surface of said crystal;

a monolithic integrated circuit array of circuit elements corresponding to and adapted for energizing respective ones of said LED devices, said integrated circuit array being adjacent the back surface of said crystal; and

interconnection means sandwiched between said arrays for providing electrical interconnections between respective ones of said LED devices and circuit elements at said back surface, said circuit elements being selectively operable for independently energizing corresponding ones of said LED devices to emit light at said back surface, said light being transmitted through said substrate for being observed at the front surface of said substrate.

2. A composite LED display array as set forth in claim 1 wherein said substrate is a monocrystalline III/V compound.

3. A composite LED display array as set forth in claim 2 wherein said substrate comprises a monolithic crystal of GaP doped to have n-type conductivity.

4. A composite LED display array as set forth in claim 3 wherein said GaP is doped with Te or Se.

5. A composite LED display array as set forth in claim 3 wherein said LED devices are formed in a single crystal nitrogen-doped GaP epitaxial layer on said substrate of GaP.

6. A composite LED display array as set forth in claim 5 wherein said LED devices are adapted to emit light of a plurality of colors, there being at least one LED for each color.

7. A composite LED display array as set forth in claim 6 wherein said LED devices comprise a plurality of LED assemblies, each assembly comprising at least one green LED and at least one red LED.

8. A composite LED display array as set forth in claim 7 wherein the red LED comprises a p-n junction formed by a zinc and oxygen doped GaP area at the surface of said nitrogen-doped GaP epitaxial layer.

9. A composite LED display array as set forth in claim 8 wherein each LED assembly comprises a central red LED flanked by a green LED.

10. A composite LED display array as set forth in claim 9 wherein the green LED comprises a zinc diffusion area on each side of the red LED at the surface of said nitrogen-doped GaP epitaxial layer.

11. A composite LED display array as set forth in claim 2 wherein said light-absorbing doped region is characterized by zinc doping having a concentration greater than 10¹⁸ atoms/cc but less than 10²⁰ atoms/cc.

12. A composite LED display array as set forth in claim 1 wherein said light-absorbing doped region extends through said substrate.

13. A composite LED display array as set forth in claim 1 wherein said doped region comprises a metal selected from atomic group II.

14. A composite LED display array as set forth in claim 13 wherein the group II metal is zinc and is doped to a concentration greater than 10¹⁸ atoms/cc.

15. A composite integrated circuit LED display array comprising:

a light-transmissive planar substrate of a single III-V crystal carrying on the back side thereof of a plurality of optically isolated LED devices, the optical isolation being effected by a light-absorbing doped region between individual LED devices, said doped region being adapted to absorb light emitted by the individual LED devices, each of said LED devices being constituted by at least one diode having a separate p-n junction at which said light is radiated, said junction being at the back surface of said crystal, said light being transmitted through said crystal for being observed at the front surface of said crystal; and

a planar integrated circuit array comprising memory and drive circuit elements corresponding to respective ones of said LED devices, said integrated circuit array being integrally joined to said light-transmissive substrate at the back side of said crystal, said memory circuit elements being selectively addressable to cause said drive circuit elements to independently energize the respective LED devices to emit light at said back surface, said light being transmitted through said substrate for being observed at the front surface of said substrate.