Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith

• US 3,949,410 A
• Filed: 01/23/1975
• Issued: 04/06/1976
• Est. Priority Date: 01/23/1975
• Status: Expired due to Term

• Current Assignee: IBM Information Products Corp. (Ninestar Corporation)
• Original Assignee: International Business Machines Corporation
• Inventors: Taub, Howard H., Bassous, Ernest, Kuhn, Lawrence
• Primary Examiner(s): Miller, Jr., George H.
• Application Number:
  US05/543,569
• Time in Patent Office: 439 Days
• Field of Search: 346/75, 346/140, 317/3
• US Class Current: 347/75
• CPC Class Codes: B41J 2/02 generating a continuous ink jet
• CPC Class Codes: B41J 2/035 by electric or magnetic field
• CPC Class Codes: B41J 2/06 by electric or magnetic field
• CPC Class Codes: B41J 2/155 for line printing
• CPC Class Codes: B41J 2/162 Manufacturing of the nozzle plates
• CPC Class Codes: B41J 2/1629 wet etching
• CPC Class Codes: B41J 2002/1853 ink collectors for continuous Inkjet printers, e.g. gutters, mist suction means
• CPC Class Codes: B41J 2202/12 with ink circulating through the whole print head
• CPC Class Codes: B41J 2202/13 Heads having an integrated circuit
• CPC Class Codes: G01D 15/18 Nozzles emitting recording material

Abstract

The practice of this disclosure obtains a monolithic structure useful for electrohydrodynamically synchronizing the formation of droplets in a jet stream exiting from a jet nozzle. The monolithic structure is primarily adaptable for ink jet printing. The jet nozzle structure provided by the practice of this disclosure includes a jet nozzle design in a crystalline semiconductor block, e.g., of silicon (Si), germanium (Ge) or gallium arsenide (GaAs), with an electrode structure which is integrally incorporated therewith whereby a variable electric field is established proximate to the orifice of the jet nozzle structure. The electric field electrohydrodynamically perturbs the jet stream emitting from the jet nozzle structure so that formation of drops in the jet stream is controllably achieved, e.g., synchronously when the variable electric field is oscillating with a given periodicity.

Claims

1. A monolithic structure for electrohydrodynamically controlling the formation of droplets in a liquid jet stream exiting from a jet nozzle orifice of at least one jet nozzle structure comprising:

a jet nozzle design for said jet nozzle structure in a single crystalline semiconductor block;

an electrode structure integrally incorporated with said jet nozzle design for establishing an electric field proximate to said orifice of said jet nozzle structure; and

electrical circuit means connected to said electrode structure and having integral and operational relationship to said semiconductor block, for applying a time varying electrical signal to said electrode structure for establishing a time varying electric field proximate to said orifice of said jet nozzle structure, which electrohydrodynamically perturbs a liqud jet stream exiting from said jet nozzle orifice for controllably achieving temporal and spatial formation of droplets in said jet stream.

2. A monolithic structure as set forth in claim 1 wherein:

said electrical circuit means includes transistor switching circuitry deposited on said semiconductor block, and including said block in its operational circuitry.

3. A monolithic structure as set forth in claim 1 wherein:

there is included an array of a plurality of said jet nozzle structures, each with a respective said jet nozzle design and a respective said electrode structure and a respective said electrical circuit means, which selectively establishes said respective time varying electric field at each said orifice of said array.

4. A monolithic structure as set forth in claim 1 wherein:

said electrical circuit means establishes said time varying field as an oscillating field with a given periodicity, and the formation of said droplets in said jet stream is achieved synchronously with said oscillations of said electric field.

5. A monolithic structure as set forth in claim 1 wherein both said electrode structure and said jet nozzle design have electrical insulation means between them and said exiting jet stream.

6. A monolithic structure as set forth in claim 1 wherein said electrode structure is a doped region of polycrystalline silicon.

7. A monolithic structure as set forth in claim 1 wherein said jet nozzle design has thereon a coating to isolate it from said jet liquid.

8. A monolithic structure as set forth in claim 7 wherein said coating is an electrical insulation layer.

9. A monolithic structure as set forth in claim 1 wherein:

said semiconductor is selected from the group consisting of silicon, germanium, and gallium arsenide.

10. A monolithic structure as set forth in claim 9 wherein said semiconductor is silicon.

11. A monolithic structure as set forth in claim 9 wherein a silicon dioxide insulation layer electrically insulates said jet nozzle design from said jet liquid.

12. A device including at least one jet nozzle structure for electrohydrodynamic control of drop formation in a liquid jet stream exiting from an orifice of said jet nozzle structure which comprises:

a jet nozzle design in a substrate of single crystalline semiconductor; and

electrode structure means with integral relationship to said jet nozzle design and electrically insulated from said jet stream, for establishing an electric field proximate to said orifice downstream thereof for electrohydrodynamically controlling drop formation in said jet stream both temporally and spatially.

13. A device as set forth in claim 12 wherein:

there is included an array of a plurality of said jet nozzle structures, each with a respective said jet nozzle design and with a respective said electrode structure means, for electrohydrodynamically controlling drop formation in the respective said jet stream both temporally and spatially.

14. Device as set forth in claim 12 wherein

said jet nozzle design includes an opening in said substrate, and

said electrode structure means includes an electrode layer gapped from said orifice and insulated from both said jet nozzle design and from said jet stream.

15. A device as set forth in claim 12 wherein:

there is isolation means integrally bonded to the surface of said jet nozzle design at the liquid contacting portion thereof.

16. A device as set forth in claim 15 wherein said isolation means is electrical insulation means.

17. Device as set forth in claim 12 wherein said opening is a pyramidal opening.

18. Device as set forth in claim 17 wherein

said substrate is single crystalline silicon,

said pyramidal opening is defined by four (111) orientation silicon surface planes, and

said electrode is insulated from said silicon substrate by a layer of electrical insulation thereon.

19. Device as set forth in claim 18 wherein said electrical insulation layer comprises SiO₂.

20. Device as set forth in claim 18 wherein

said electrode is n+ polycrystalline silicon, and

said electrode is insulated from said liquid jet stream by a layer of electrical insulation on said electrode.

21. Device as set forth in claim 20 wherein said electrical insulation layer comprises SiO₂.

22. A device as set forth in claim 12 wherein:

said semiconductor is selected from the group consisting of silicon, germanium, and gallium arsenide.

23. A device as set forth in claim 22 wherein said semiconductor is silicon.

24. A device as set forth in claim 23 wherein:

said electrode structure means includes a doped region in said silicon substrate selected from the group consisting of p⁺ silicon and n⁺ silicon, and having higher conductivity than said substrate.

25. A device as set forth in claim 24 wherein:

said doped electrode region in said silicon substrate and said substrate are of opposite conductivity types, and said doped region in said silicon substrate and said substrate establish a p-n junction therebetween.

26. A device as set forth in claim 23 wherein said jet nozzle design has an opening defined by four (111) silicon surface planes.

27. A device as set forth in claim 26 wherein said orifice of said jet nozzle design is approximately rectangular.

28. A device as set forth in claim 26 wherein:

said opening of said jet nozzle design includes a silicon membrane in said opening and at least one said orifice in said membrane.

29. A device as set forth in claim 28 wherein said membrane has a thickness approximately in the range of 1 micrometer to 10 micrometers.

30. An ink jet printing system incorporating at least one jet nozzle orifice for a liquid ink jet stream exiting therefrom which comprises:

a jet nozzle structure including a jet nozzle design in a single crystalline semiconductor substrate;

an electrical insulation layer on said semiconductor of said jet nozzle design where it is traversed in contacting relationship by said liquid;

electrode structure means integral with said jet nozzle structure and insulated from said jet stream exiting from said orifice, for electrohydrodynamically perturbing said jet stream for controlling formation of droplets in said stream temporally and spatially; and

ink jet printing means for ink jet printing with said droplets.

31. The jet printing means as set forth in claim 30 wherein said ink jet printing means includes:

means for electrically charging said droplets in a jet stream; and

means for deflecting said droplets selectively so that particular droplets are utilized for printing on a target.

32. An ink jet printing system as set forth in claim 30 which includes an array of a plurality of said jet nozzle structures in said substrate, and wherein said ink jet printing means utilizes in a coordinated manner said droplets formed in each of said jet streams for said ink jet printing, and including a respective said electrical insulation layer and a respective said electrode structure means.

33. An ink jet printing system as set forth in claim 32 wherein said controlling of said information of droplets in each said jet stream is achieved either individually or collectively.

34. Ink jet printing system as set forth in claim 30 wherein:

said semiconductor is selected from the group consisting of silicon, germanium, and gallium arsenide.

35. Ink jet printing system as set forth in claim 34 wherein said semiconductor is silicon.

36. A monolithic structure for electrohydrodynamically controlling the formation of droplets in a liquid jet stream exiting from a jet nozzle orifice of at least one jet nozzle structure comprising:

a jet nozzle design for said jet nozzle structure in a block having at least a region of semiconductor at a surface thereof;

an electrode structure integrally incorporated with said jet nozzle design for establishing an electric field proximate to said orifice of said jet nozzle structure; and

electrical circuit means connected to said electrode structure and having integral and operational relationship to said semiconductor region, for applying a time varying electrical signal to said electrode structure for establishing a time varying electric field proximate to said orifice of said jet nozzle structure, which electrohydrodynamically perturbs a liquid jet stream exiting from said jet nozzle orifice for controllably achieving temporal and spatial formation of droplets in said jet stream.

37. A monolithic structure as set forth in claim 36 wherein:

there is included an array of a plurality of said jet nozzle structures, each with a respective said jet nozzle design and a respective said electrode structure and a respective said electrical circuit means, which selectively establishes said respective time varying electric field at each said orifice of said array.

38. A monolithic structure as set forth in claim 36 wherein:

said electrical circuit means includes transistor switching circuitry deposited on said semiconductor region, and including said region in its operational circuitry.

39. A monolithic structure as set forth in claim 36 wherein:

said semiconductor is selected from the group consisting of silicon, germanium, and gallium arsenide.

40. A monolithic structure as set forth in claim 39 wherein said semiconductor is crystalline.

41. A device including at least one jet nozzle structure for electrohydrodynamic control of drop formation in a liquid jet stream exiting from an orifice of said jet nozzle structure which comprises:

a jet nozzle design in a substrate having at least a region of semiconductor at a surface thereof; and

electrode structure means with integral relationship to said jet nozzle design and electrically insulated from said jet stream, for establishing an electric field proximate to said orifice downstream thereof for electrohydrodynamically controlling drop formation in said jet stream both temporally and spatially.

42. A device as set forth in claim 41 wherein:

there is included an array of a plurality of said jet nozzle structures, each with a respective said jet nozzle design and with a respective said electrode structure means, for electrohydrodynamically controlling drop formation in the respective said jet stream both temporally and spatially.

43. Device as set forth in claim 41 wherein

said jet nozzle design includes an opening in said substrate, and

said electrode structure means includes an electrode layer gapped from said orifice and insulated from said jet nozzle design and from said jet stream.

44. A jet nozzle structure as set forth in claim 41 wherein:

said semiconductor is selected from the group consisting of silicon, germanium, and gallium arsenide.

45. A jet nozzle structure as set forth in claim 44 wherein said semiconductor is crystalline.

46. An ink jet printing system incorporating at least one jet nozzle orifice for a liquid ink jet stream exiting therefrom which comprises:

a jet nozzle structure including a jet nozzle design in a substrate having at least a region of semiconductor at a surface thereof;

an electrical insulation layer on said substrate of said jet nozzle design where it is traversed in contacting relationship by said liquid;

electrode structure means integral with said jet nozzle structure and insulated from said jet stream exiting from said orifice, for electrohydrodynamically perturbing said jet stream for controlling formation of droplets in said stream temporally and spatially; and

ink jet printing means for ink jet printing with said droplets.

47. An ink jet printing system as set forth in claim 46 which includes an array of a plurality of said jet nozzle structures in said substrate, and wherein said ink jet printing means utilizes in a coordinated manner said droplets formed in each of said jet streams for said ink jet printing, and including a respective said electrical insulation layer and a respective said electrode structure means.

48. An ink jet printing system as set forth in claim 47 wherein said controlling of said formation of droplets in each said set stream is achieved either individually or collectively.

49. Ink jet printing system as set forth in claim 46 wherein:

said semiconductor is selected from the group consisting of silicon, germanium, and gallium arsenide.

50. Ink jet printing system as set forth in claim 49 wherein said semiconductor is crystalline.