Semi-conductor non-volatile optical memory device

• US 3,950,738 A
• Filed: 07/12/1974
• Issued: 04/13/1976
• Est. Priority Date: 07/13/1973
• Status: Expired due to Term

• Current Assignee: Agency of Industrial Science & Technology (Government of Japan)
• Original Assignee: Agency of Industrial Science & Technology (Government of Japan)
• Inventors: Tarui, Yasuo, Hayashi, Yutaka, Nagai, Kiyoko
• Primary Examiner(s): Hecker, Stuart N.
• Application Number:
  US05/487,963
• Time in Patent Office: 641 Days
• Field of Search: 357/23, 357/30, 357/19, 357/13, 340/173 R, 340/173 LS
• US Class Current: 365/185.04
• CPC Class Codes: G11C 11/42 using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically- coupled or feedback-coupled
• CPC Class Codes: G11C 16/0408 comprising cells containing floating gate transistors G11C16/0483, G11C16/0491 take precedence
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 29/792 with charge trapping gate insulator, e.g. MNOS-memory transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 31/00 Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K30/00 takes precedence; devices consisting of a plurality of solid state components formed in, or on, a common substrate, other than combinations of radiation-sensitive components with one or more electric light sources, H01L27/00

Abstract

A semiconductor non-volatile optical memory device is constructed by providing light-permeable charge retention means in an insulating layer on a first semiconductor surface into which photo-generated carriers in the surface of the first semiconductor region are injected over the semiconductor-insulator potential barrier by applying reverse bias between the first semiconductor region and a second region forming a rectifying junction with the first semiconductor region. Also disclosed in a non-volatile memory integrated circuit employing one or more of said devices together with light source in the same package. The non-volatile memory integrated circuit operates under low bias voltage and is compatible with a high speed integrated logic circuits.

Claims

1. A semiconductor non-volatile optical memory device for visible and infrared light comprising,

a first semiconductor region,

a second region forming a rectifying junction with the surface of said first semiconductor region,

an insulating layer provided on said two regions,

light-permeable charge retention means provided in said insulating layer on said two regions for retaining carriers generated by light-irradiation on said first semiconductor region and a means for applying reverse bias voltage smaller than breakdown voltage of said rectifying junction to said rectifying junction.

2. A semiconductor non-volatile optical memory device as set forth in claim 1, wherein said charge retention means provided in said insulating layer is of light-transparent conductive material.

3. A semiconductor non-volatile optical memory device as set forth in claim 1, wherein said charge retention means provided in said insulating layer is opaque and has over said rectifying junction a slit through which light is permitted to pass.

4. A semiconductor non-volatile optical memory device as set forth in claim 1, wherein said insulating layer comprises two kinds of insulating layers and said charge retention means provided in said insulating layer is carrier traps produced at the interface between the two kinds of insulating layers.

5. A semiconductor non-volatile optical memory device as set forth in claim 1, further comprising a third region provided in the surface of said first semiconductor region and under the charge retention means, said third region being disposed apart from or in contact with the side wall of said second region and being of the same conductivity type as that of said first semiconductor region and the impurity concentration in said third region being higher than that in said first semiconductor region.

6. A semiconductor non-volatile optical memory device as set forth in claim 1, further comprising a gate electrode provided on said insulating layer.

7. A semiconductor non-volatile optical memory device as set forth in claim 6, wherein said gate electrode is light-transparent.

8. A semiconductor non-volatile optical memory device as set forth in claim 6, wherein said gate elctrode is opaque and has a slit through which light is permitted to pass.

9. A semiconductor non-volatile optical memory device as set forth in claim 6, wherein said gate electrode is positioned above said charge retention means.

10. A semiconductor non-volatile optical memory device as set forth in claim 6, wherein said gate electrode is positioned above said charge retention means but not covered said rectifying junction under said charge retention means.

11. A semiconductor non-volatile optical memory device as set forth in claim 1, wherein said charge retention means provided in said insulating layer is constituted of isolated small particles of conductive material.

12. A semiconductor non-volatile optical memory device as set forth in claim 11, wherein said isolated small particles of conductive material are opaque.

13. A semiconductor non-volatile optical memory device as set forth in claim 1, further comprising another second region provided in or on said first semiconductor region at a distance from said second region and making another rectifying junction with the surface of said first semiconductor region, said insulating layer being provided on said two rectifying junctions.

14. A semiconductor non-volatile optical memory device as set forth in claim 13, further comprising a third region provided in the surface of said first semiconductor region and under the charge retention means.

15. A semiconductor non-volatile optical memory device as set forth in claim 14, wherein said third region is provided between said two second regions.

16. A semiconductor non-volatile optical memory device as set forth in claim 1, further comprising a third region of the same conductivity type as that of said first semiconductor region but of a different impurity concentration provided in the surface of said first semiconductor region and under the charge retention means.

17. A semiconductor non-volatile optical memory device as set forth in claim 16, wherein the depth of said third region is shorter than the width of the surface depletion layer formed in said third region and said first region by applying a reverse bias less than the breakdown voltage between said second region and said first region.

18. A semiconductor non-volatile optical memory device as set forth in claim 16, wherein the impurity concentration in the third region is higher than that in said first semiconductor region.

19. A semiconductor integrated circuit comprising:

at least one semiconductor element having an insulating layer on the surface of the semiconductor thereof, a light-permeable charge retention means provided within said insulating layer and a rectifying junction provided beneath said charge retention means on the surface of said semiconductor,

means for applying reverse bias voltage smaller than break-down voltage of said rectifying junction to said rectifying junction, and

light irradiation means for generating carriers in said semiconductor element, said light irradiation means and said semiconductor element being disposed in one package,

thereby generating carriers upon irradiation by light to give rise to an electric field including said charge retention means and injecting carrier charges into said charge retention means to memorize optical information non-volatilely.