Capacitor structure and circuit facilitating increased frequency stability of integrated circuits
First Claim
1. In a monolithic integrated circuit structure having a plurality of diffused heavily doped isolation regions of a first conductivity type to isolate epitaxial islands of a second conductivity type, a monolithic capacitor structure, the improvement comprising:
- a first region of a second conductivity type, said first region being diffused into at least one of the plurality of isolation regions and forming a PN junction therewith, the outwardly facing surface of said first region being substantially equal in surface area to the surface area of the other of the plurality of isolation regions and being a portion of the surface of the monolithic integrated circuit;
a layer of dielectric material, said dielectric material being grown over a main portion of said outwardly facing surface of said first region;
a first layer of metallization, said first layer of metallization being contiguous with the outwardly facing surface of said layer of dielectric material for forming a first plate of the capacitor; and
said first region being a second plate of the capacitor such that the monolithic capacitor structure thus formed in the isolation region of the monolithic circuit structure requires minimum useful area of the monolithic integrated circuit to be utilized in construction thereof, the plurality of isolation regions being otherwise required to provide isolation in the operation of the monolithic integrated circuit.
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Abstract
A stabilizing circuit which increases the effective value of a capacitor and the structure of a monolithic capacitor are disclosed. The stabilizing circuit includes a transistor having a base electrode connected to the capacitor and an emitter electrode connected to a point at which it is desired to provide an increased effective capacitance. The capacitor structure is suitable for being included in monolithic integrated circuits having diffused isolation regions. A first plate of the capacitor is formed by a metallization layer, the second plate of the capacitor may be formed by an emitter diffusion into the isolation diffusion. A base diffusion which is conductively connected to the emitter diffusion and to the isolation diffusion facilitates connection of the second plate of the capacitor to the substrate.
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Citations
5 Claims
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1. In a monolithic integrated circuit structure having a plurality of diffused heavily doped isolation regions of a first conductivity type to isolate epitaxial islands of a second conductivity type, a monolithic capacitor structure, the improvement comprising:
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a first region of a second conductivity type, said first region being diffused into at least one of the plurality of isolation regions and forming a PN junction therewith, the outwardly facing surface of said first region being substantially equal in surface area to the surface area of the other of the plurality of isolation regions and being a portion of the surface of the monolithic integrated circuit; a layer of dielectric material, said dielectric material being grown over a main portion of said outwardly facing surface of said first region; a first layer of metallization, said first layer of metallization being contiguous with the outwardly facing surface of said layer of dielectric material for forming a first plate of the capacitor; and said first region being a second plate of the capacitor such that the monolithic capacitor structure thus formed in the isolation region of the monolithic circuit structure requires minimum useful area of the monolithic integrated circuit to be utilized in construction thereof, the plurality of isolation regions being otherwise required to provide isolation in the operation of the monolithic integrated circuit. - View Dependent Claims (2, 3, 5)
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4. the first region is of a N+ type conductivity;
- and said another region is of a P type conductivity.
Specification