Capacitor structure and circuit facilitating increased frequency stability of integrated circuits

• US 3,953,875 A
• Filed: 01/02/1974
• Issued: 04/27/1976
• Est. Priority Date: 01/02/1974
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Cave, David L., Davis, Walter R.
• Primary Examiner(s): Rolinec, R. V.
• Assistant Examiner(s): Dahl, Lawrence J.
• Application Number:
  US05/430,267
• Time in Patent Office: 846 Days
• Field of Search: 330/19, 330/38 M, 333/80 T, 357/14, 357/48, 357/51
• US Class Current: 257/532
• CPC Class Codes: H01L 27/0777 Vertical bipolar transistor in combination with capacitors only
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 27/0826 Combination of vertical complementary transistors
• CPC Class Codes: H03F 1/083 in transistor amplifiers H03F1/10 - H03F1/22 take precedence
• CPC Class Codes: H03F 1/302 in bipolar transistor amplifiers H03F1/303, H03F1/305, H03F1/307 take precedence
• CPC Class Codes: H03F 1/307 in push-pull amplifiers
• CPC Class Codes: H03F 3/3071 with asymmetrical driving of the end stage
• CPC Class Codes: H03F 3/3072 using Darlington transistors H03F3/3074 takes precedence

Abstract

A stabilizing circuit which increases the effective value of a capacitor and the structure of a monolithic capacitor are disclosed. The stabilizing circuit includes a transistor having a base electrode connected to the capacitor and an emitter electrode connected to a point at which it is desired to provide an increased effective capacitance. The capacitor structure is suitable for being included in monolithic integrated circuits having diffused isolation regions. A first plate of the capacitor is formed by a metallization layer, the second plate of the capacitor may be formed by an emitter diffusion into the isolation diffusion. A base diffusion which is conductively connected to the emitter diffusion and to the isolation diffusion facilitates connection of the second plate of the capacitor to the substrate.

Claims

1. In a monolithic integrated circuit structure having a plurality of diffused heavily doped isolation regions of a first conductivity type to isolate epitaxial islands of a second conductivity type, a monolithic capacitor structure, the improvement comprising:

a first region of a second conductivity type, said first region being diffused into at least one of the plurality of isolation regions and forming a PN junction therewith, the outwardly facing surface of said first region being substantially equal in surface area to the surface area of the other of the plurality of isolation regions and being a portion of the surface of the monolithic integrated circuit;

a layer of dielectric material, said dielectric material being grown over a main portion of said outwardly facing surface of said first region;

a first layer of metallization, said first layer of metallization being contiguous with the outwardly facing surface of said layer of dielectric material for forming a first plate of the capacitor; and

said first region being a second plate of the capacitor such that the monolithic capacitor structure thus formed in the isolation region of the monolithic circuit structure requires minimum useful area of the monolithic integrated circuit to be utilized in construction thereof, the plurality of isolation regions being otherwise required to provide isolation in the operation of the monolithic integrated circuit.

2. The capacitor structure of claim 1 wherein said second plate of the capacitor is conductively coupled to the substrate of the monolithic integrated circuit structure by the heavily doped isolation region.

3. The capacitor structure of claim 1 wherein;

the isolation regions are of a P+ type conductivity;

5. The capacitor of claim 1 further including:

another region of the first conductivity type, said another region being diffused into the epitaxial island surrounding said at least one isolation region and integral with the same wherein said at least one isolation region is preshaped prior to said first region being diffused therein such that the surface area of said at least one isolation region is extended into said surrounding epitaxial islands;

a second layer of metallization, said second layer of metallization being applied between a portion of outwardly facing surface of said first region and the extended surface area of said at least one isolation region formed by said another region to remove rectifying effects which would otherwise occur therebetween.

4. the first region is of a N+ type conductivity;

and said another region is of a P type conductivity.