Method of forming light emitting diode array with dome geometry

• US 3,954,534 A
• Filed: 10/29/1974
• Issued: 05/04/1976
• Est. Priority Date: 10/29/1974
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Burnham, Robert D., Scifres, Donald R.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US05/518,335
• Time in Patent Office: 553 Days
• Field of Search: 357/16-19, 156/7, 156/8, 156/13, 156/17, 427/85, 427/86, 148/187
• US Class Current: 438/29
• CPC Class Codes: H01L 21/30612 Etching of AIIIBV compounds
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: Y10S 148/051 Etching
• CPC Class Codes: Y10S 148/072 Heterojunctions
• CPC Class Codes: Y10S 148/085 Isolated-integrated
• CPC Class Codes: Y10S 148/097 Lattice strain and defects
• CPC Class Codes: Y10S 148/135 Removal of substrate
• CPC Class Codes: Y10S 148/15 Silicon on sapphire SOS

Abstract

A structure for providing arrays or individual hemispherical diodes and methods of producing the diodes. When the diode array is to be part of a configuration utilizing a substrate, the substrate is selected to have radiation transparency, a lower refractive index, and lattice constant and lattice structure similar to that of a crystal layer grown in hemispheres formed in the substrate. When the diode array is to be removed from the substrate, a material that can be preferentially etched is grown between the hemispheres formed in the substrate and the grown crystal layer that is to have light emitting areas.

Claims

1. A method of making a light emitting diode having one region with a curved surface comprising the steps of:

forming a curved depression in a support substrate,

forming on said curved depression a first crystal layer of semiconductor material containing a substantial amount of aluminum,

forming on said first layer a second crystal layer of a material containing substantially no aluminum,

forming a rectifying junction in said second layer and centered over said depression, and

immersing said layered structure in a bath of an acid which reacts rapidly with said aluminum-containing material but does not react substantially with said material which contains substantially no aluminum thereby to dissolve said first layer to separate said substrate from said second layer such that a light emitting diode having a curved surface is formed.

2. A method of making a light emitting diode having a hemispherical surface comprising the steps of:

forming a substantially hemispherical-shaped depression in a support substrate,

forming on the surface of said hemispherical depression a first crystal layer of a semiconductor material containing a substantial amount of aluminum,

forming on said first layer a second crystal layer of a material containing substantially no aluminum,

forming a rectifying junction in said second layer and centered over said depression, and

immersing said layered structure in a bath of an acid which reacts rapidly with said aluminum-containing material but does not react substantially with said material which contains substantially no aluminum thereby to dissolve said first layer to separate said substrate from said second layer such that a light emitting diode having a substantially hemispherical surface is formed.

3. The method of claim 2 wherein said substrate and said second layer are selected from the group consisting of GaAs and GaP, and said first layer is selected from the group consisting of GaAlAs and GaAlP.

4. A method of making an array of substantially hemispherical light emitting diodes comprising the steps of:

forming in a support substrate an array of substantially hemispherical-shaped depressions,

forming on the surfaces of said depressions a first crystal layer of a semiconductor material containing a substantial amount of aluminum,

forming on said first layer a second crystal layer of a material containing substantially no aluminum,

forming a plurality of rectifying junctions in said second layer with each junction centered over a different depression of said array of depressions, and

immersing said layered structure in a bath of an acid which reacts rapidly with said aluminum-containing material but does not react substantially with said material which contains substantially no aluminum thereby to dissolve said first layer to separate said substrate from said second layer such that an array of light emitting diodes having substantially hemispherical surfaces is formed.

5. The method of claim 4 wherein said substrate and said second layer are selected from the group consisting of GaAs and GaP, and said first layer is selected from the group consisting of GaAlAs and GaAlP.