Semiconductor waveguide antenna with diode control for scanning

• US 3,959,794 A
• Filed: 09/26/1975
• Issued: 05/25/1976
• Est. Priority Date: 09/26/1975
• Status: Expired due to Term

• Current Assignee: The United States Of America As Represented By The Secretary Of The Army
• Original Assignee: The United States Of America As Represented By The Secretary Of The Army
• Inventors: Chrepta, Metro M., Jacobs, Harold
• Primary Examiner(s): Lieberman, Eli
• Application Number:
  US05/617,211
• Time in Patent Office: 242 Days
• Field of Search: 343/701, 343/754, 343/755, 343/785, 343/854
• US Class Current: 343/701
• CPC Class Codes: H01Q 13/20 Non-resonant leaky-waveguide or transmission-line antennas; Equivalent structures causing radiation along the transmission path of a guided wave
• CPC Class Codes: H01Q 3/443 varying the phase velocity along a leaky transmission line frequency scanning H01Q3/22; non-resonant leaky-waveguide or transmission-line aerials H01Q13/20

Abstract

A single element line scanner applicable to millimeter or submillimeter w beam steering which includes a semiconductor waveguide made of a high resistivity bulk single crystal intrinsic semiconductor material such as silicon. Parallel spaced radiator elements are disposed on one major or top surface of the semiconductor waveguide transverse to the direction of wave propagation along the waveguide. Parallel spaced PIN diodes are disposed on the other or bottom major surface of the semiconductor waveguide transverse to the direction of wave propagation. The PIN diodes are spaced close enough to prevent radiation from escaping outwardly from the bottom major surface and are provided with a variable forward bias to produce a conductivity sheet. The conductivity sheet on the bottom major surface is electronically modulated as a function of the bias current for a given frequency and the variation of such a conductivity sheet changes the wavelengths in the semiconductor waveguide. The changing wavelengths provide variable wavelength spacing between the spaced radiator elements. Each variation of wavelength corresponds to a discrete angle of radiation reinforcement from the radiator elements such that there is provided a single radiation lobe pattern which may be scanned through 180 degrees.

Claims

1. A single line scanner comprising:

a semiconductor waveguide of rectangular cross section adapted to propagate wave energy in the E₁₁^y mode along a prescribed axis transverse to the dimensions of said cross section;

said waveguide having top and bottom surfaces parallel to said axis;

a plurality of spaced parallel radiator elements on said top surface transverse to said prescribed axis in the path of said propagated wave energy;

means affixed to another surface to prevent outward radiation therefrom as wave energy is propagated along said waveguide; and

means in circuit with said radiation prevention means for changing the wavelengths in said waveguide at a given frequency of operation to control the wavelength spacing between said radiator elements whereby radiated energy is reinforced to produce a radiation lobe pattern at a prescribed angle with respect to said propagating axis.

2. The single line scanner in accordance with claim 1 wherein said waveguide is made of silicon.

3. The single line scanner in accordance with claim 1 wherein said radiator elements comprise alloyed ohmic bars.

4. The single line scanner in accordance with claim 1 wherein said radiation preventing means comprise a plurality of spaced PIN diodes transverse to said prescribed axis.

5. The single line scanner in accordance with claim 4 wherein the means for changing the wavelength spacing comprises a variable voltage source for forward biasing said PIN diodes, the angle of reinforcement being a function of the value of the applied forward bias.

6. The single line scanner in accordance with claim 4 wherein said PIN diodes each comprise spaced p and n type doped strips.

7. The single line scanner in accordance with claim 2 wherein said radiator elements comprise alloyed ohmic bars embedded in said silicon a portion of said bars being exposed to interact with said propagated E₁₁^y mode wave energy.

8. The single line scanner in accordance with claim 5 wherein said other surface is said bottom surface.

9. The single line scanner in accordance with claim 5 wherein said other surface is a sidewall surface of said waveguide.

10. The single line scanner in accordance with claim 8 wherein said waveguide is made of silicon.

11. The single line scanner in accordance with claim 9 wherein said waveguide is made of silicon.