Disc support structure and method of producing the same
First Claim
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1. A method of producing a support structure having a flat base and upwardly extending side walls integral with said base for supporting generally upright on edge crystal discs of a given diameter during treatment thereof, comprising:
- thermally depositing silicon from a gaseous mixture comprises of a carrier gas and a thermally decomposable gaseous silicon compound onto at least one heated cylindrical carrier member, said carrier member having at least one flattened wall portion so as to form a correspondingly shaped tubular member composed of silicon about said carrier member and which tubular member has a flattened wall portion corresponding to that on said carrier member;
disjoining the deposited tubular member from said carrier member without destroying said tubular member;
forming longitudinal separation cuts in said tubular member through two opposing side wall portions thereof adjacent to said flattened wall portion of the tubular member and along lines parallel to a longitudinal axis of said tubular member and at a height dimension above said flattened wall portion of the tubular member but below its wall portion located above said flattened wall portion; and
removing the cut-separated portion of the tubular member above said flattened wall portion so as to define a support structure having a flat base corresponding to said flattened wall portion and upwardly extending side walls integral with said flat base and in opposing relation to each other, said side wall having a height dimension (b) which is determined by the relation;
b = r12 ±
a2 /2(r2 ±
a)whereina is the distance from the radial center of said tubular member to the flattened wall portion thereof;
r.sub. 1 is the dimension of the internal radius of said tubular member; and
r2 is the dimension of the crystal discs to be supported by the support structure.
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Abstract
A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped member is then cut and mechanically processed in directions parallel and perpendicular to the axes of the tube to form a support structure having a flat base and upwardly extending curved side walls.
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Citations
5 Claims
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1. A method of producing a support structure having a flat base and upwardly extending side walls integral with said base for supporting generally upright on edge crystal discs of a given diameter during treatment thereof, comprising:
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thermally depositing silicon from a gaseous mixture comprises of a carrier gas and a thermally decomposable gaseous silicon compound onto at least one heated cylindrical carrier member, said carrier member having at least one flattened wall portion so as to form a correspondingly shaped tubular member composed of silicon about said carrier member and which tubular member has a flattened wall portion corresponding to that on said carrier member; disjoining the deposited tubular member from said carrier member without destroying said tubular member; forming longitudinal separation cuts in said tubular member through two opposing side wall portions thereof adjacent to said flattened wall portion of the tubular member and along lines parallel to a longitudinal axis of said tubular member and at a height dimension above said flattened wall portion of the tubular member but below its wall portion located above said flattened wall portion; and removing the cut-separated portion of the tubular member above said flattened wall portion so as to define a support structure having a flat base corresponding to said flattened wall portion and upwardly extending side walls integral with said flat base and in opposing relation to each other, said side wall having a height dimension (b) which is determined by the relation; b = r12 ±
a2 /2(r2 ±
a)wherein a is the distance from the radial center of said tubular member to the flattened wall portion thereof; r.sub. 1 is the dimension of the internal radius of said tubular member; and r2 is the dimension of the crystal discs to be supported by the support structure. - View Dependent Claims (2, 3, 4, 5)
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Specification