Disc support structure and method of producing the same

• US 3,962,391 A
• Filed: 03/20/1974
• Issued: 06/08/1976
• Est. Priority Date: 05/07/1973
• Status: Expired due to Term

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Dietze, Wolfgang, Steinwagner, Gerhard, Mittermeier, Richard
• Primary Examiner(s): White, Robert F.
• Assistant Examiner(s): Pavelko, Thomas P.
• Application Number:
  US05/452,934
• Time in Patent Office: 811 Days
• Field of Search: 264/67, 264/81, 264/138, 264/159, 264/162
• US Class Current: 264/81
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C30B 31/14 Substrate holders or susceptors

Abstract

A support structure composed of Si or SiC for supporting semiconductor crystal discs during annealing or doping thereof. A somewhat tube-shaped member having at least one flat side is formed by thermal deposition of a gaseous silicon compound onto a similarly shaped carrier member and the tube-shaped member is then cut and mechanically processed in directions parallel and perpendicular to the axes of the tube to form a support structure having a flat base and upwardly extending curved side walls.

Claims

1. A method of producing a support structure having a flat base and upwardly extending side walls integral with said base for supporting generally upright on edge crystal discs of a given diameter during treatment thereof, comprising:

thermally depositing silicon from a gaseous mixture comprises of a carrier gas and a thermally decomposable gaseous silicon compound onto at least one heated cylindrical carrier member, said carrier member having at least one flattened wall portion so as to form a correspondingly shaped tubular member composed of silicon about said carrier member and which tubular member has a flattened wall portion corresponding to that on said carrier member;

disjoining the deposited tubular member from said carrier member without destroying said tubular member;

forming longitudinal separation cuts in said tubular member through two opposing side wall portions thereof adjacent to said flattened wall portion of the tubular member and along lines parallel to a longitudinal axis of said tubular member and at a height dimension above said flattened wall portion of the tubular member but below its wall portion located above said flattened wall portion; and

removing the cut-separated portion of the tubular member above said flattened wall portion so as to define a support structure having a flat base corresponding to said flattened wall portion and upwardly extending side walls integral with said flat base and in opposing relation to each other, said side wall having a height dimension (b) which is determined by the relation;

b = r₁² ±

a² /2(r₂ ±

a)

wherein

a is the distance from the radial center of said tubular member to the flattened wall portion thereof;

r.sub. 1 is the dimension of the internal radius of said tubular member; and

r₂ is the dimension of the crystal discs to be supported by the support structure.

2. A method as defined in claim 1 comprising forming said separation cuts along said given distance which is equal to the length of the tubular member.

3. A method as defined in claim 1 wherein said given distance is less than the length of said tubular member and forming at least one transverse separation cut in said tubular member through said wall portion located above said flattened wall portion thereof and along a line perpendicular to said tube axis for a second given distance less than the diameter dimension of said tubular member and to a meeting with said longitudinal cuts so as to define at least one strut on the support structure integral with the side walls thereof, said strut extending upwardly beyond the periphery of the side walls a distance greater than the radius of the crystal discs to be supported by the support structure.

4. A method as defined in claim 1, wherein said gaseous mixture consists of hydrogen and silico-chloroform and said carrier member is heated to a temperature of about 1100°

to 1200°

C. so that silicon is deposited on said carrier member at a substantially high deposition rate.

5. A method as defined in claim 1, wherein said deposition is continued until the tube formed on the carrier member has a wall thickness of at least 1 mm.