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Diffusion guarded metal-oxide-silicon field effect transistors

  • US 3,967,988 A
  • Filed: 03/14/1975
  • Issued: 07/06/1976
  • Est. Priority Date: 08/05/1974
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a field effect transistor having at least one guard region in a semiconductor substrate of one conductivity type, which comprises:

  • forming spaced apart source and drain regions of opposite conductivity type to said substrate in said substrate,forming an insulating layer over the space between said source and drain regions,forming a conductive gate electrode having two ends over said insulating layer, andsubsequently forming said at least one guard region so that the ends of said gate electrode are in registration with a corresponding portion of said at least one guard region.

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