Diffusion guarded metal-oxide-silicon field effect transistors
First Claim
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1. A method for fabricating a field effect transistor having at least one guard region in a semiconductor substrate of one conductivity type, which comprises:
- forming spaced apart source and drain regions of opposite conductivity type to said substrate in said substrate,forming an insulating layer over the space between said source and drain regions,forming a conductive gate electrode having two ends over said insulating layer, andsubsequently forming said at least one guard region so that the ends of said gate electrode are in registration with a corresponding portion of said at least one guard region.
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Abstract
Metal-oxide-silicon field effect transistors (MOSFET) are shown utilizing diffusion guarding of the gate electrode of a MOSFET device and utilizing the drain of one MOSFET device as the source of the next integrally formed MOSFET device. Other types of isolation shown include the surrounding of a functional unit with a source diffusion area, and/or permanently connecting a gate electrode to a potential level for preventing signal flow past such a gate.
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Citations
4 Claims
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1. A method for fabricating a field effect transistor having at least one guard region in a semiconductor substrate of one conductivity type, which comprises:
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forming spaced apart source and drain regions of opposite conductivity type to said substrate in said substrate, forming an insulating layer over the space between said source and drain regions, forming a conductive gate electrode having two ends over said insulating layer, and subsequently forming said at least one guard region so that the ends of said gate electrode are in registration with a corresponding portion of said at least one guard region. - View Dependent Claims (2, 3, 4)
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Specification