Depletion layer laser beam modulator and deflector

• US 3,970,364 A
• Filed: 08/20/1974
• Issued: 07/20/1976
• Est. Priority Date: 08/20/1974
• Status: Expired due to Term

• Current Assignee: Curators of the University of Missouri (University of Missouri)
• Original Assignee: Curators of the University of Missouri (University of Missouri)
• Inventors: Bell, Robert J., Gerson, Robert
• Primary Examiner(s): Larkins, William D.
• Application Number:
  US05/498,840
• Time in Patent Office: 700 Days
• Field of Search: 331/94.5 H, 331/94.5 M, 350/150, 350/160 R, 350/96 WG
• US Class Current: 359/276
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/295 Analog deflection from or in an optical waveguide structure]

Abstract

Method and apparatus for deflecting and modulating a beam of coherent radiation wherein an electric potential is applied across the electrodes of an MOS semiconductor device to vary the thickness and hence conductivity of the depletion layer therein. Incident radiation being propagated through the semiconductor, or alternatively through the depletion layer itself, is deflected and/or modulated as the thickness of the depletion layer is varied.

Claims

1. A method for deflecting a beam of radiation in a semiconductor device having a body of semiconductor material, conductive means being provided over said body but being separated therefrom by insulating means, said method comprising:

applying a first electric potential between said semiconductor body and first portion of said conductive means to establish in the semiconductor body adjacent said first portion a first surface depletion layer of a first thickness,

applying a second electric potential between said semiconductor body and a second portion of said conductive means to establish in the semiconductor body adjacent said second portion a second surface depletion layer of a second thickness, said first and second portions being adjacent so that said second surface depletion layer is immediately adjacent said first surface depletion layer and forms a junction therewith, the difference in thickness between the first surface depletion layer and the second surface depletion layer resulting in a thickness discontinuity at the junction; and

coupling beam of incident radiation directly into the first surface depletion layer of the semiconductor device, the radiation beam traveling through the first surface depletion layer at an oblique angle with respect to the junction of the first surface depletion layer and the second depletion layer so that the radiation beam is deflected in the second surface depletion layer relative to the direction of travel of the radiation beam in the first surface depletion layer, the relative thickness discontinuity determining the angle at which the radiation beam is deflected at the junction.

2. A method in accordance with claim 2 including selectively varying one or both of the first electric potential and the second electric potential to correspondingly vary the thickness discontinuity at the junction and the angle at which the radiation beam is deflected.

3. A method in accordance with claim 2 including monitoring for the deflected radiation beam along an output path, the selective deflection of the incident beam causing the radiation beam output along the output path to be frequency modulated to correspond to variations in the thickness discontinuity.

4. Apparatus for deflecting a beam of radiation in a semiconductor device having a body of semiconductor material, conductive means being provided over said body but being seperated therefrom by insulating means, comprising:

a semiconductor device having a body of semiconductor material, conductive means being provided over said body but being separated therefrom by insulating means,

means for applying a first electric potential between said semiconductor body and a first portion of said conductive means to establish in the semiconductor body adjacent said first portion a first surface depletion layer of a first thickness,

means for applying a second electric potential between said semiconductor body and a second portion of said conductive means to establish in the semiconductor body adjacent said second portion a second surface depletion layer of a second thickness, said first and second portion being adjacent so that said second surface depletion layer is immediately adjecent said first surface depletion layer and forms a junction therewith, the difference in thickness between the first surface depletion layer and the second surface depletion layer resulting in a thickness discontinuity at the junction; and

means for coupling the beam of radiation directly into the first surface depletion layer of the semiconductor device, the radiation beam traveling through the first surface depletion layer at an oblique angle with respect to the junction of the first surface depletion layer and the second surface depletion layer to deflect the incident radiation beam in the second surface depletion layer relative to the direction of travel of the radiation beam in the first surface depletion layer, the relative thickness discontinuity determining the angle at which the radiation beam is deflected at the junction.

5. Apparatus in accordance with claim 4 wherein means are initially provided to increase the conductivity of the first and second surface depletion layers above the intrinsic conductivity of the semiconductor.

6. Apparatus in accordance with claim 4 including means for selectively varying one or both of the first electric potential and the second electric potential to correspondingly vary the thickness discontinuity at the junction and the angle at which the radiation beam is deflected.

7. Apparatus in accordance with claim 6 including means for monitoring for the deflected radiation beam along an output path, the output of the monitoring means being frequency modulated according to the selective deflection of the radiation beam from the output path responsive to variations in the thickness discontinuity.