Variable optical coupler

• US 3,976,358 A
• Filed: 07/09/1975
• Issued: 08/24/1976
• Est. Priority Date: 08/08/1974
• Status: Expired due to Term

• Current Assignee: International Standard Electric Corporation (ITT, Inc.)
• Original Assignee: International Standard Electric Corporation (ITT, Inc.)
• Inventors: Thompson, George H. B.
• Primary Examiner(s): Corbin, John K.
• Assistant Examiner(s): Levy, Stewart
• Application Number:
  US05/594,480
• Time in Patent Office: 412 Days
• Field of Search: 350/96 C, 350/96 WG
• US Class Current: 385/41
• CPC Class Codes: G02B 6/30 for use between fibre and thin-film device
• CPC Class Codes: G02B 6/4249 comprising arrays of active devices and fibres
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/3133 the optical waveguides being made of semiconducting materials
• CPC Class Codes: G02F 2201/066 channel; buried

Abstract

This invention relates to an optical waveguide switch and directional coupler providing variable coupling between two optical fibers. The coupler is fabricated in semiconductive material such as GaAs or GaAlAs. A double heterostructure is used having a higher index of refraction middle layer. Optical fibers are inserted in channels in the semiconductive material. Varying the reverse bias across the heterostructure junctions located in the material between the channels electrically changes the refractive index of the material and alters the coupling between the fibers. The device is applicable to switching in optical communication systems.

Claims

1. A semiconductive double heterostructure optical waveguide coupler comprising:

a first layer of semiconductive material having first and second major surfaces;

a second layer of semiconductive material on said first major surface;

a third layer of semiconductive material on said second major surface, said first layer having an index of refraction higher than said second and third layers;

a plurality of channels of semi-insulating material forming coupled optical waveguides, said channels extending through said first and second layers; and

means for applying a reverse bias across said first, second and third layers to produce a depletion region which alters the optical coupling between said waveguides.

2. A semiconductive double heterostructure optical waveguide coupler according to claim 1 wherein said first layer is n-type GaAs, said second layer is p-type GaAlAs and said third layer is n-type GaAlAs.

3. A semiconductive double heterostructure optical waveguide coupler according to claim 2 wherein said second layer is approximately 0.3 μ

m thick.

4. A semiconductive double heterostructure optical waveguide coupler according to claim 2 wherein said plurality of waveguides comprises two waveguides extending alongside each other to form a directional coupler.

5. A semiconductive double heterostructure optical waveguide coupler according to claim 4 wherein said means for applying includes an electrode system for applying a reverse bias to produce said depletion region between said two waveguides, thereby increasing the index of refraction.

6. A semiconductive double heterostructure optical waveguide coupler according to claim 5 wherein said optical waveguides are formed by proton bombardment.

7. A semiconductive double heterostructure optical waveguide coupler according to claim 6 wherein said optical waveguides are 4 μ

m wide and separated from each other by approximately 3 μ

m.

8. A semiconductive double heterostructure optical waveguide coupler according to claim 1 wherein said first layer is n-type GaAs, said second layer is n-type GaAlAs, and said third layer is p-type GaAlAs.

9. A semiconductive double hererostructure optical waveguide coupler according to claim 8 wherein said plurality comprises two waveguides extending alongside each other to form a directional coupler.

10. A semiconductive double heterostructure optical waveguide coupler according to claim 9 wherein said waveguides are formed by diffusing a p-type dopant through said first and second layers.

11. A semiconductive double heterostructure optical waveguide coupler according to claim 10 wherein said means for applying comprises an electrode system for applying a reverse bias to produce said depletion region between said two waveguides.

12. A semiconductive double heterostructure optical waveguide coupler according to claim 1 wherein said first layer is n-type GaAs, said second and third layer is n-type GaAlAs.

13. A semiconductive double heterostructure optical waveguide coupler according to claim 12 wherein said plurality comprises two waveguides extending alongside each other to form a directional coupler.

14. A semiconductive double heterostructure optical waveguide coupler according to claim 13 wherein said waveguides are formed by diffusing a p-type dopant through said second layer into said first layer.

15. A semiconductive double heterostructure optical waveguide coupler according to claim 14 wherein said means for applying comprises an electrode system producing a depletion region through at least one of said waveguides.