Photovoltaic device having polycrystalline base

• US 3,978,333 A
• Filed: 04/15/1974
• Issued: 08/31/1976
• Est. Priority Date: 04/15/1974
• Status: Expired due to Term

• Current Assignee: Everett Crisman, William F. Armitage Jr
• Original Assignee: Everett Crisman, William F. Armitage Jr
• Inventors: Armitage, William F. Jr., Crisman, Everett
• Primary Examiner(s): Borchelt, Archie R.
• Assistant Examiner(s): Nelms, D. C.
• Application Number:
  US05/461,165
• Time in Patent Office: 869 Days
• Field of Search: 250/211 R, 250/211 J, 357/15, 357/30, 357/29, 357/59, 136/89
• US Class Current: 136/255
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/0368 including polycrystalline semiconductors H01L31/0392 takes precedence
• CPC Class Codes: H01L 31/03682 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/07 the potential barriers being only of the Schottky type
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells
• CPC Class Codes: Y10S 148/054 Flat sheets-substrates
• CPC Class Codes: Y10S 148/139 Schottky barrier
• CPC Class Codes: Y10S 148/153 Solar cells-implantations-laser beam

Abstract

A photovoltaic device comprising a polycrystalline base having an electrically conductive grid affixed to the surface of the device to which illumination is to be applied, said grid effecting a rectifying junction with the base and at the same time functioning as a current carrying contact, said grid being arranged so that substantially all of the individual crystallites are contacted at least once thereby, while at the same time maintaining the coverage of the base by said grid to a minimum.

Claims

1. A photovoltaic device comprising a photoresponsive polycrystalline base having individual crystallites, said base having at least one substantially flat surface to which illumination is to be applied, and an electrically conductive grid affixed to said flat surface, said grid being arranged so that substantially all of the individual crystallites are contacted at least once by said grid, said grid being constructed of a material that will effect a rectifying junction with said base, said base having ohmic electrical contact means affixed thereto at a point spaced from said grid.

2. In the device of claim 1, said base being of a material selected from the group consisting of silicon, germanium, indium phosphide, gallium arsenide, aluminum antimonide, gallium phosphide, gallium antimonide, cadmium sulfide, cadmium sellinide, cadmium telluride, zinc oxide, zinc sulfide, zinc sellinide, cupric sulfide, cupric oxide. titanium dioxide, aluminum arsenide, and gallium aluminum arsenide.

3. In the device of claim 1, said grid being affixed to said base by an alloyed junction.

4. In the device of claim 3, said base being constructed of an n-type silicon and said grid comprising aluminum.

5. In the device of claim 3, said base being constructed of a p-type silicon, and said grid comprising antimony and gold.

6. In the device of claim 1, said rectifying junction being a Schottky barrier.

7. In the device of claim 6, said base being constructed of n-type silicon, and said grid being of a material selected from the group consisting of aluminum, silver, gold, platinum, platinum silicide, tungsten or molybdenum.

8. In the device of claim 6, said base being constructed of p-type silicon, and said grid being of a material selected from the group consisting of aluminum, silver, gold, platinum, platinum silicide, tungsten of molybdenum.

9. In the device of claim 1, said grid comprising a plurality of spaced, strip portions electrically interconnected to each other, said portions being arranged so as to effect minimum possible coverage of said base while at the same time making contact with substantially all of said individual crystallites.