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Damage thresholds of p-n junction devices by a current pulse method

  • US 3,978,405 A
  • Filed: 02/07/1975
  • Issued: 08/31/1976
  • Est. Priority Date: 02/07/1975
  • Status: Expired due to Term
First Claim
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1. An improved method for determining the damage threshold of a semiconductor p-n junction comprising the steps of:

  • applying a reverse polarity constant current pulse of less than 100 nanoseconds in duration to said p-n junction;

    measuring elapsed time from the initial application of said constant current pulse to a point at which second breakdown occurs indicated by a significant drop in breakdown voltage;

    calculating said damage threshold of said p-n junction from a time integral of said breakdown voltage over said elapsed time multiplied by said constant current level.

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