Ultrasonic transducer array and imaging system

• US 3,979,711 A
• Filed: 06/17/1974
• Issued: 09/07/1976
• Est. Priority Date: 06/17/1974
• Status: Expired due to Term

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Inventors: Meindl, James D., Plummer, James D., Maginness, Maxwell G.
• Primary Examiner(s): Farley, Richard A.
• Application Number:
  US05/480,609
• Time in Patent Office: 813 Days
• Field of Search: 340/1 R, 340/5 H, 340/5 MP, 340/10, 340/9, 73/67.8 R, 73/67.8 S
• US Class Current: 367/87
• CPC Class Codes: G01H 3/125 for representing acoustic field distribution using optical means G01H9/002; sonar systems for imaging G01S7/56, G01S15/89; acoustic holography G03H3/00
• CPC Class Codes: G01S 15/8925 the array being a two-dimensional transducer configuration, i.e. matrix or orthogonal linear arrays
• CPC Class Codes: G01S 7/5206 Two-dimensional coordinated display of distance and direction; B-scan display
• CPC Class Codes: Y10S 367/903 Transmit-receive circuitry

Abstract

An ultrasonic bidirectional transducer array, and an imaging system including said array, wherein the array comprises a plurality of transducer elements each having a major face capable of bidirectionally transmitting and receiving ultrasonic energy and an opposite face. The transducer elements have their major bidirectional faces arrayed in a predetermined surface. Means is carried by the opposite face of each element for bidirectionally providing and receiving electrical energy across each transducer element. In the imaging system the array may be selectively scanned to provide successive displays of moving objects at a rate which gives the impression of continuous motion to a human observer.

Claims

1. In an ultrasonic transducer array, a relatively thin wafer of piezoelectric material having planar, substantially parallel top and bottom surfaces, a relatively thin conductive layer formed on said bottom surface, said outermost surface of said layer forming a major face capable of bidirectionally transmitting and receiving ultrasonic energy, a relatively thin additional conductive layer formed on said top surface having a grid of isolation grooves formed therein extending from the surface of said additional layer through said wafer top surface and into said wafer to a depth intermediate said wafer top and bottom surfaces to define a plurality of isolated portions in said wafer, a plurality of isolated portions of said additional conductive layer being carried by said top surface of said isolated portions of said wafer, and a contact area formed in the upper surface of each of said portions of said additional conductive layer.

2. A transducer array as in claim 1 together with an insulating layer carried by the upper surface of said portions of said additional conductive layer, said insulating layer having apertures formed therein exposing the contact areas formed in the top surface of said isolated portions of said additional conductive layer, conductive means formed in said apertures in electrical contact with said contact areas and extending to the surface of said insulating layer to form a plurality of conductive surfaces, a patterned metal interconnecting layer formed on said insulating layer and contacting a predetermined exposed contact surface, a semiconductor wafer having a substantially planar surface including a plurality of semiconductor active and passive devices including regions formed in said wafer extending to said planar surface of said wafer and having portions of said regions exposed at said planar surface, said semiconductor wafer being carried by the upper surface of said patterned metal interconnecting layer, wherein said exposed regions at said planar surface of said wafer are in electrically conductive engagement with predetermined portions of said patterned metal layer.

3. The transducer array of claim 1 together with means connected to the first named conductive layer and to the contact areas of the isolated portions of the additional conductive layer for bi-directionally providing and receiving electrical energy across the transducer elements formed thereby.

4. The transducer array of claim 3 wherein the means for providing and receiving electrical energy comprises circuitry in the form of a semiconductor wafer adjacent to the wafer of piezoelectric material and connected to the contact areas of the additional conductive layer.