Semiconductor indicating instrument

• US 3,982,262 A
• Filed: 04/17/1974
• Issued: 09/21/1976
• Est. Priority Date: 04/17/1974
• Status: Expired due to Term

• Current Assignee: Anatoly Ivanovich Kurnosov, Anatoly Prokofievich Karatsjuba, Igor Ivanovich Kruglov, Igor Veniaminovich Ryzhikov, Tatyana Georgievna Kmita, Vladimir Ivanovich Kurinny, Vladimir Vasilievich Judin
• Original Assignee: Anatoly Ivanovich Kurnosov, Anatoly Prokofievich Karatsjuba, Igor Ivanovich Kruglov, Igor Veniaminovich Ryzhikov, Tatyana Georgievna Kmita, Vladimir Ivanovich Kurinny, Vladimir Vasilievich Judin
• Inventors: Kurnosov, Anatoly Ivanovich, Kurinny, Vladimir Ivanovich, Kruglov, Igor Ivanovich, Judin, Vladimir Vasilievich, Karatsjuba, Anatoly Prokofievich, Kmita, Tatyana Georgievna, Ryzhikov, Igor Veniaminovich
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/461,718
• Time in Patent Office: 888 Days
• Field of Search: 357/17, 357/18, 357/58, 357/63, 357/91, 357/29
• US Class Current: 257/77
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 33/0054 for devices with an active region comprising only group IV elements
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: Y10S 438/931 Silicon carbide semiconductor

Abstract

A semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another region is disposed between the regions of opposite types of conductivity. The silicon carbide crystal also has an additional region with structure defects which are clusters with a concentration of 10¹⁹ cm^-3 to 10²² cm^-3, that region adjoining the second ohmic contact and having a thickness greater than that of the p-type region by at least 0.05 mu.

Claims

1. A semiconductor display device consisting of a silicon-carbide crystal and comprising:

an n-type conductivity region;

a first diffused region of p-type conductivity;

a second diffused region disposed between said regions;

a first ohmic contact attached to said n-type region;

several second ohmic contacts attached to said first region;

light-emitting patches of which the topology is determined by the size and shape of said contacts; and

an additional region of silicon carbide, incorporating clusters of structural radiation defects with a concentration of 10¹⁹ cm.sup.^-3 to 10²² cm.sup.^-3 ;

said additional region being located between said second contacts, and the thickness whereof being about 0.5 mu larger than that of said first region.

2. The semiconductor display device as defined in claim 1, wherein said additional region has two layers, one of said layers being a dielectric incorporating atoms of silicon and carbon.