N-type amorphous semiconductor materials

• US 3,983,076 A
• Filed: 07/02/1973
• Issued: 09/28/1976
• Est. Priority Date: 07/02/1973
• Status: Expired due to Term

• Current Assignee: Energy Conversion Devices
• Original Assignee: Energy Conversion Devices
• Inventors: Flasck, Richard A., Rockstad, Howard K.
• Primary Examiner(s): Douglas, Winston A.
• Assistant Examiner(s): Bell, Mark
• Application Number:
  US05/375,794
• Time in Patent Office: 1,184 Days
• Field of Search: 106/47 R, 106/47 Q, 252/501, 252/512, 252/62.1, 252/62.3 R, 252/300, 252/578, 96/1.5, 117/201, 117/33.3, 117/106 A, 350/1
• US Class Current: 252/519.4
• CPC Class Codes: H01L 29/00 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00
• CPC Class Codes: H01L 29/263 Amorphous materials

Abstract

New amorphous semiconductor and chalcogenide compositions are provided exhibiting n-conductivity characteristics. Chalcogenide compositions, which are normally formed as p-type materials, are converted to n-type materials or are initially formed as n-type materials, by elevating the temperatures thereof below their crystallization temperature and substantially in excess of the temperature at which its conductivity at room temperature versus annealing temperature curve decreases sharply from a relatively high constant value and allowing the same to cool to room temperature.

Claims

1. An n-type chalcogenide amorphous material as measured by the Seebeck coefficient, said n-type material being that obtained by subjecting a normally p-type amorphous chalcogenide composition to a temperature below its crystallization temperature and which is located at a point on its room temperature versus annealing temperature curve which is sufficiently in excess of the temperature at which its conductivity at room temperature decreases sharply from a relatively high constant value that its Seebeck coefficient has a negative value, and then cooling the same to room

2. The n-type amorphous chalcogenide material of claim 1 and where the composition has at least about 2% of one or more of the chalcogenide elements of sulfur, selenium and tellurium and has the formula:

space="preserve" listing-type="equation">Ge.sub.x Te.sub.y D.sub.z E.sub.m

where,

Ge=germanium

Te=tellurium

D=selenium or sulfur or combinations of both

E=arsenic or antimony or combinations of both

and,

x is between and including 0 and 98% (atomic)

y is between and including 0 and 90%

z is between and including 0 and 75%

3. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and tellurium in atomic percentages

4. The n-type chalcogenide material of claim 3 which consists essentially of a mixture of germanium, selenium and tellurium in atomic percentages determined by the areas encompassed by the inclined hatched areas of FIG.

5. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, tellurium and arsenic in atomic percentages

6. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and arsenic in atomic percentages

7. The n-type chalcogenide material of claim 1 which consists essentially of a mixture of germanium, selenium and antimony in atomic percentages

8. The n-type chalcogenide material of claim 1 which is a sputter or vapor

9. The n-type chalcogenide material of claim 2 which is a sputter or vapor

10. The n-type chalcogenide material of claim 4 which is a sputter or vapor deposited film on a substrate.