Method of manufacturing semiconductor camera tube targets

• US 3,986,761 A
• Filed: 08/05/1965
• Issued: 10/19/1976
• Est. Priority Date: 08/05/1965
• Status: Expired due to Term

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Redington, Rowland W.
• Primary Examiner(s): Tudor, Harold J.
• Application Number:
  US04/477,615
• Time in Patent Office: 4,093 Days
• Field of Search: 29/25.14, 29/25.17, 29/25.3, 29/25.3 D, 29/25.3 H, 29/569, 29/572, 29/576, 316/17, 316/18, 316/19
• US Class Current: 445/22
• CPC Class Codes: H01J 9/233 Manufacture of photoelectric screens or charge-storage screens
• CPC Class Codes: H01J 9/38 Exhausting, degassing, filling, or cleaning vessels

Abstract

1. The method of manufacturing a camera tube target from a semiconductor material for placement in a camera tube prior to degassing thereof comprising the steps of initially doping the semiconductor material with an impurity for rendering it sensitive to a desired radiation spectrum but in a quantity less than required for sensitivity in said desired radiation spectrum; annealing said semiconductor material at a temperature greater than the subsequent degassing temperature for a period of time effective to increase the impurity concentration to a level sufficient to render the semicoductor material sensitive to the desired radiation spectrum, said concentration being substantially more stable at lower degassing temperatures than the initial impurity concentration; positioning said semiconductor material as a target within a radiation sensitive camera tube enclosure; and degassing said camera tube enclosure by heating said enclosure including said target for driving the gas from said enclosure.

Claims

1. The method of manufacturing a camera tube target from a semiconductor material for placement in a camera tube prior to degassing thereof comprising the steps of initially doping the semiconductor material with an impurity for rendering it sensitive to a desired radiation spectrum but in a quantity less than required for sensitivity in said desired radiation spectrum;

annealing said semiconductor material at a temperature greater than the subsequent degassing temperature for a period of time effective to increase the impurity concentration to a level sufficient to render the semiconductor material sensitive to the desired radiation spectrum, said concentration being substantially more stable at lower degassing temperatures than the initial impurity concentration;

positioning said semiconductor material as a target within a radiation sensitive camera tube enclosure; and

degassing said camera tube enclosure by heating said enclosure including said target for driving the gas from said enclosure.

2. The method of manufacturing a camera tube target from a semiconductor material for inclusion in a camera tube prior to degassing thereof at temperatures lower than 300°

C comprising the steps of diffusing an acceptor type impurity into a body of initially n-type semiconductor material at an elevated temperature higher than 700°

C;

said temperature being sufficient to dope said semiconductor with acceptor type impurity metal in the range from one-third to one-half the n-type impurity by atomic percentage; and

annealing said target at a temperature higher than said degassing temperature but lower than 700°

C causing the effective acceptor concentration to increase while rendering the target stable during degassing procedures.

3. The method of manufacturing a camera tube target from semiconductor material for inclusion in a camera tube prior to degassing thereof at temperatures lower than 300°

C comprising the steps of coating a body of initially n-type semiconductor material with an acceptor-type impurity metal;

heating the coated body to a temperature higher than the degassing temperature to cause the metal to diffuse into the semiconductor;

said temperature being sufficient to dope said semiconductor with acceptor-type impurity metal in the range from one-third to one-half the n-type impurity by atomic percentage;

removing said metal coating; and

annealing said target at a temperature higher than said degassing temperature but less than the diffusing temperature of said acceptor-type impurity causing the effective acceptor concentration to increase in approximate balance with the n-type impurity and rendering the target stable during degassing procedures.

4. The method of manufacturing a camera tube target from germanium semiconductor material for placement in a camera tube prior to degassing thereof at temperatures lower than from 250°

C to 300°

C comprising the steps of diffusing copper into a body of initially n-type germanium at an elevated temperature higher than said degassing temperature which is effective to dope said semiconductor with copper in the range of from one-third to one-half the n-type impurity contained in said germanium by atomic percentage, and annealing said target at a temperature higher than said degassing temperature but lower than said diffusion temperature causing the effective acceptor concentration to increase to a range characteristic of copper^II doped germanium while rendering the target stable for degassing procedures.

5. A method of manufacturing a camera tube target from germanium semiconductor material for placement in a camera tube prior to degassing thereof at temperatures lower than 300°

C comprising the steps of coating a body of initially n-type impurity containing germanium with an acceptor-type impurity metal;

heating the coated body to a temperature higher than 700°

C to cause the metal to diffuse into the germanium;

said temperature being sufficient to saturate said germanium with acceptor-type impurity metal in the range of from one-third to one-half the n-type impurity by atomic percentage as determined by the temperature-solubility characteristic of the acceptor impurity in germanium;

removing said metal coating; and

annealing said body at a temperature between 300°

C and 500°

C for a time sufficient for causing the effective acceptor concentration to increase to a substantially maximum value in approximate balance with the n-type impurity and rendering the target stable for subsequent degassing procedures.

6. The method according to claim 5 wherein said acceptor-type impurity metal is copper and said n-type impurity is selected from the group consisting of arsenic and antimony.

7. A method of manufacturing a camera tube target from germanium semiconductor material for placement in a camera tube prior to degassing thereof at temperatures lower than 300°

C comprising the steps of coating a body of initially n-type impurity containing germanium with copper;

heating the coated body to a temperature higher than 700°

C to cause the copper to diffuse into the germanium, said temperature being sufficient to saturate said germanium with copper in the range of from one-third to one-half the n-type impurity by atomic percentage as determined by the temperature-solubility characteristic of copper in germanium;

removing said copper coating;

subjecting a surface of said body to ion-glow discharge; and

annealing said body at a temperature between 300°

C and 500°

C for a time sufficient for causing the effective acceptor concentration to increase to a maximum approximating 95% of the n-type impurity, rendering the target stable for subsequent degassing procedures.

8. The method of manufacturing a camera tube target from germanium semiconductor material for placement in a camera tube prior to degassing thereof at a temperature lower than 300°

C comprising the steps of diffusing copper into a body of initially n-type germanium at an elevated temperature higher than said degassing temperature which is effective to dope said semiconductor with copper in the range of from one-third to one-half the n-type impurity contained in said germanium by atomic percentage and annealing said target at a temperature between 300°

C and 475°

C for a time between ten hours and ten minutes in inverse relation to the temperature employed, for rendering the target suitably radiation sensitive and stable during degassing procedures.