×

Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system

  • US 3,987,217 A
  • Filed: 10/16/1974
  • Issued: 10/19/1976
  • Est. Priority Date: 01/03/1974
  • Status: Expired due to Term
First Claim
Patent Images

1. The method of forming a metallization system on a semiconductor surface for subsequent bonding to an electrode comprising the steps of:

  • a. providing a semiconductor die having a surface;

    b. depositing a first layer of aluminum having a thickness of about 2,500 A on said surface; and

    c. depositing a second layer comprising a mixture of aluminum and tin on said first layer of aluminum wherein the aluminum comprises an equivalent thickness of about 2,500 A and the tin comprises an equivalent thickness of about 20,000 A; and

    the metallization system includes a third layer of palladium of about 800 A to 1,000 A thickness.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×