Deep diode solid state inductor coil

• US 3,988,764 A
• Filed: 04/23/1975
• Issued: 10/26/1976
• Est. Priority Date: 10/30/1973
• Status: Expired due to Term

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Anthony, Thomas R., Cline, Harvey E.
• Primary Examiner(s): Wojciechowicz, Edward J.
• Application Number:
  US05/570,661
• Time in Patent Office: 552 Days
• Field of Search: 357/60, 357/76, 357/88, 357/89, 357/90, 357/51
• US Class Current: 257/531
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 2017/004 with the coil helically wound around an axis without a core
• CPC Class Codes: H01F 2017/0086 on semiconductor substrate
• CPC Class Codes: H01L 21/24 Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body H01L21/182 takes precedence
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/86 controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Abstract

An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of a dopant metal therein. Means are provided for connecting the columnar structures into a series electrical arrangement with each other to form a solid state inductor for integral circuits.

Claims

1. A solid state inductor coil comprising

a body of semiconductor material having a

predetermined first type conductivity, a predetermined level of resistivity, and a preferred crystallographic structure;

two major opposed surfaces being, respectively, the top and bottom surfaces of the body, at least one of the major surfaces having a preferred planar crystal orientation which is one selected from the group consisting of (111), (110) and (100);

a vertical axis which is substantially aligned parallel with a first preferred crystal axis of the material of the body;

an array of regions of second and opposite type conductivity disposed in the body;

each region of second type conductivity extending between, and terminating in, the two opposed major surfaces, and having two opposed end surfaces, each end surface being coextensive with a respective one of the major surfaces, and a longitudinal axis aligned substantially parallel with the vertical axis of the body;

the material of each second region consisting of recrystallized semiconductor material of the body formed in situ by the migration of a melt of metal-rich semiconductor material of the body through the entire body from one opposed major surface to the other by thermal gradient zone melting at a predetermined elevated temperature along a thermal gradient substantially parallel with the first preferred crystal axis and the vertical axis of the body and having a predetermined level of concentration of the metal of the melt distributed substantially uniformly throughout the entire region, the level of concentration of the metal being determined by the solid solubility limit of that metal in that semiconductor material at that predetermined elevated temperature of migration, the metal comprising at least one dopant impurity material for imparting the type conductivity and a predetermined level of resistivity to the recrystallized material of the region;

each second region being a path for conducting electrical currents between the opposed major surfaces of the body;

a P-N junction formed by the contiguous surfaces of the material of each region and the abutting material of the body, a portion of the junction being exposed at the opposed major surfaces, and

means for electrically connecting the array of regions into a series electrical circuit arrangement to function as an inductor coil.

2. The solid state inductor coil of claim 1 wherein

the preferred planar crystal orientation is (111), and

the cross-section of each second region has a triangular-like configuration.

3. The solid state inductor coil of claim 1 wherein

the preferred planar crystal orientation is (100), and

the cross-section of each second region has a square-like configuration.

4. The solid state inductor coil of claim 1 wherein the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide.

5. The solid state inductor coil of claim 4 wherein

the material of the body is silicon having N-type conductivity, and

the dopant impurity material is aluminum.

6. The solid state inductor coil of claim 1 wherein

the preferred planar crystal orientation is (111), and

each region of second type conductivity has a triangular-like cross-sectional configuration.

7. The solid state inductor coil of claim 6 wherein

the semiconductor material of the body is silicon, and

the dopant material is aluminum.

8. The solid state inductor coil of claim 1 wherein

the preferred planar crystal orientation is (100), and

each region of second type conductivity has a rectangular-like cross-sectional configuration.

9. The solid inductor coil of claim 8 wherein

the semiconductor material of the body is silicon, and

the dopant impurity material is aluminum.

10. The solid state inductor coil of claim 1 and including

at least one electrical isolation region disposed in the body and electrically isolating the solid state inductor from the remainder of the material of the body, each region having second type conductivity and extending between, and terminating in, the opposed major surfaces;

the material of each of the isolation regions consisting of recrystallized semiconductor material of the body formed in situ by the migration of a melt of metal-rich semiconductor material of the body through the entire body from one opposed major surface to the other by thermal gradient zone melting at a predetermined elevated temperature along a thermal gradient substantially parallel with the first preferred crystal axis and the vertical axis of the body and having a predetermined level of concentration of the metal of the melt distributed substantially uniformly throughout the entire region, the level of concentration of the metal being determined by the solid solubility limit of that metal in that semiconductor material at that predetermined elevated temperature of migration, the metal comprising at least one dopant impurity material for imparting the second type conductivity and a predetermined level of resistivity to the recrystallized material of the region;

each of the isolation regions having a vertical axis aligned substantially parallel with the first crystal axis of the material of the body, and

a P-N junction formed by the contiguous surfaces of the material of each of the isolation regions and the abutting material of the body, a portion of the junction being exposed at the opposed major surfaces.

11. The solid state inductor coil of claim 10 wherein

the electrical isolation region comprises a plurality of intersecting planar regions encompassing a selected portion of the body in which the solid state inductor coil is disposed, and

each planar region of the isolation region is oriented substantially parallel with a second crystal axis of the material of the body for a preferred planar crystal orientation of the at least one major surface.

12. The solid state inductor coil of claim 11 in which

the preferred planar crystal orientation of the at least one major surface is one selected from the group consisting of (100) and (111),

the electrical isolation region consists of two sets of a pair of spaced planar regions, each region of each set being substantially parallel to the other region and substantially perpendicular to each region of the other set of planar regions and the opposed major surfaces of the body and intersecting each region of the other set of regions at substantially a right angle.

13. The solid state inductor coil of claim 12 in which

the preferred planar crystal orientation is (111),

the second crystal axis of one set of planar regions is one selected from the group consisting of <

112>

, <

211>

and <

121>

, and

the second crystal axis of the planar regions of the second set is one which is perpendicular to the second axes of the planar region of the first set.

14. The solid state inductor of claim 13 wherein

the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide.

15. The solid state inductor of claim 14 wherein

the material of the body is silicon having N-type conductivity, and

the dopant impurity material is aluminum.

16. The solid state inductor coil of claim 13 wherein

each region of second type conductivity of the coil has a rectangular-like cross-sectional configuration.

17. The solid state inductor coil of claim 13 wherein

each region of second type conductivity of the the coil has a triangular-like cross-sectional configuration.

18. The solid state inductor of claim 17 wherein

the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide.

19. The solid state inductor of claim 18 wherein

the material of the body is silicon having N-type conductivity, and

the dopant impurity material is aluminum.

20. The solid state inductor coil of claim 12 in which

the second crystal axis of each spaced planar isolation region of one set of regions is one selected from the group consisting of <

011 >

, <

101> and

<

110>

, and

the second crystal axis of each spaced planar region of the other set of regions is any other second crystal axis which is perpendicular to the crystal axis of the spaced planar regions of the other set with which they intersect.

21. The solid state inductor coil of claim 20 wherein

each region of second type conductivity of the coil has a triangular-like cross-sectional configuration.

22. The solid state inductor of claim 20 wherein

the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide.

23. The solid state inductor of claim 22 wherein

the material of the body is silicon having N-type conductivity, and

the dopant impurity material is aluminum.

24. The solid state inductor of claim 21 wherein

the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide.

25. The solid state inductor of claim 24 wherein

the material of the body is silicon having N-type conductivity, and

the dopant impurity material is aluminum.

26. The solid state inductor coil of claim 14 in which

the preferred planar crystal orientation of the at least one major surface is (100),

the second crystal axis of each spaced planar region of one set of regions is <

011>

, and

the second crystal axis of each spaced planar region of the other set of regions is <

011>

.

27. The solid state inductor of claim 26 wherein

the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide.

28. The solid state inductor of claim 27 wherein

the material of the body is silicon having N-type conductivity, and

the dopant impurity material is aluminum.