Technique for growth of thin film lithium niobate by liquid phase epitaxy
First Claim
1. Technique for the liquid phase epitaxial growth of thin film lithium niobate which comprises the steps of immersing lithium tantalate substrate seed crystal into a supercooled melt of a flux consisting of Li2 B2 O4 -- Li2 Nb2 O6 wherein the mole percent of Li2 Nb2 O6 ranges from 10-100 percent and withdrawing the seed crystal from the melt and effecting cooling thereof, so resulting in supersaturation of the melt solution on the seed and growth of a layer of lithium niobate.
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Abstract
A liquid phase epitaxial growth technique for growing lithium niobate films on lithium tantalate substrates involves growth from a flux system based on either lithium borate, lithium tungstate, tungsten oxide or potassium tungstate. Optical waveguiding occurs in films grown from the described flux systems.
19 Citations
1 Claim
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1. Technique for the liquid phase epitaxial growth of thin film lithium niobate which comprises the steps of immersing lithium tantalate substrate seed crystal into a supercooled melt of a flux consisting of Li2 B2 O4 -- Li2 Nb2 O6 wherein the mole percent of Li2 Nb2 O6 ranges from 10-100 percent and withdrawing the seed crystal from the melt and effecting cooling thereof, so resulting in supersaturation of the melt solution on the seed and growth of a layer of lithium niobate.
Specification
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Current AssigneeBell Telephone Laboratories, Inc. (Nokia Corporation)
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Original AssigneeBell Telephone Laboratories, Inc. (Nokia Corporation)
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InventorsBallman, Albert Anthony, Tien, Ping King
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Primary Examiner(s)Bernstein, Hiram H.
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Application NumberUS05/557,106Time in Patent Office652 DaysField of Search23/302 R, 23/305 RE, 23/305 R, 23/300, 156/600, 156/622, 156/624, 156/621, 156/619, 423/593, 148/26, 252/70US Class Current117/66CPC Class CodesC30B 19/02 using molten solvents, e.g....C30B 29/30 Niobates; Vanadates; Tantal...G02B 6/131 by using epitaxial growth e...
