Integrated circuit having internal main supply voltage regulator

• US 4,006,491 A
• Filed: 05/15/1975
• Issued: 02/01/1977
• Est. Priority Date: 05/15/1975
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Beutler, Robert R., Alaspa, Allan A.
• Primary Examiner(s): James, Andrew J.
• Application Number:
  US05/577,968
• Time in Patent Office: 628 Days
• Field of Search: 357/23, 357/52, 357/41, 357/42, 307/303, 307/304
• US Class Current: 257/400
• CPC Class Codes: H01L 27/0218 of field effect structures
• CPC Class Codes: H01L 27/0927 comprising a P-well only in the substrate
• CPC Class Codes: Y10S 148/07 Guard rings and cmos

Abstract

A complementary field effect transistor integrated circuit includes an input buffer, internal high density logic circuitry having a collapsed guard ring structure associated therewith, an internal power source which provides operating voltage for the internal high density logic lower than the junction reverse breakdown voltage of the collapsed guard ring structure, and an output level shifter circuit. The output level shifter circuit and input buffer, and internal power source have a conventional non-collapsed guard ring structure associated therewith.

Claims

1. A complementary field-effect transistor integrated circuit semiconductor chip comprising a first internal portion of complementary field-effect transistor circuitry having collapsed guard rings therein and a second peripheral portion of complementary field-effect transistor circuitry having non-collapsed guard rings therein, said collapsed guard rings including guard rings substantially contiguous with source and drain regions of said field-effect transistors of said first internal portion and of opposite conductivity type to said source and drain regions in said first internal portion, said non-collapsed guard rings including guard rings substantially spaced from source and drain regions of said field-effect transistors of said second peripheral portion and of opposite conductivity type to said source and drain regions in said second peripheral portion.

2. A complementary field effect transistor semiconductor chip including a first voltage conductor connected to a voltage input of said semiconductor chip and a second voltage conductor connected to a second voltage input of said semiconductor chip, an input signal conductor and an output signal conductor, said semiconductor chip comprising:

an internal voltage conductor;

complementary field effect transistor internal power source means coupled between said second voltage conductor and said internal voltage conductor for generating an internal supply voltage on said internal voltage conductor, said complementary field-effect transistor internal power source means including collapsed guard rings said collapsed guard rings having a first breakdown voltage associated therewith said internal supply voltage being less in magnitude than the magnitude of said first breakdown voltage;

an internal portion of complementary field effect transistor circuitry coupled between said first voltage conductor and said internal conductor and including collapsed guard rings substantially contiguous with and of conductivity type opposite to that of sources and drains of said field effect transistors of said internal portion of a complementary field effect transistor circuitry;

an input complementary field effect transistor circuitry section coupled between said internal portion of circuitry and said input conductor and coupled between said first and second voltage conductors and including non-collapsed guard rings substantially spaced from and of opposite conductivity type to source and drain regions of said field effect transistors of said input complementary field effect transistor circuitry section; and

an output complementary field effect transistor circuitry section coupled between said internal portion of circuitry and said output conductor and between said first and second voltage conductors and also coupled to said internal voltage conductor and including non-collapsed guard rings substantially spaced from and of opposite conductivity type to source and drain regions of said field effect transistors of said output complementary field effect transistor circuitry section.