Contactless LSI junction leakage testing method

• US 4,015,203 A
• Filed: 12/31/1975
• Issued: 03/29/1977
• Est. Priority Date: 12/31/1975
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Verkuil, Roger Leonard
• Primary Examiner(s): Smith, Alfred E.
• Assistant Examiner(s): Moore, David K.
• Application Number:
  US05/645,759
• Time in Patent Office: 454 Days
• Field of Search: 250/211 J, 250/211 R, 324/158 D, 324/158 T, 324/40 R, 357/14
• US Class Current: 324/754.23
• CPC Class Codes: G01R 31/308 using non-ionising electromagnetic radiation, e.g. optical radiation investigating or analysing materials by the use of optical means G01N21/00; image analysis G06T7/00

Abstract

An inductively coupled oscillator method for inducing eddy currents in a semiconductor PN junction wafer while irradiating said wafer with pulsed light of selected intensity. The oscillator loading due to the pulsed light modulated eddy current losses is monitored and displayed on an oscilloscope in the form of a decay time plot of voltage amplitude, the plot being a function of the pulsed light intensity and the recombination rate of light-induced electrons and holes on each side of the junctions. The leakage characteristics of the junctions which are desired to be measured are one of the factors determining said rate. Leakage characteristic is made the predominant factor by setting the intensity of the pulsed light to a value which produces a nearly straight line decay time plot on the oscilloscope display. The slope of the line then is a measure of the leakage characteristic.

Claims

1. A method for testing PN junctions in a wafer comprising:

irradiating said wafer with pulsed light of selected intensity to charge the capacitance of the junction in a direction tending to render said junction forwardly conductive,

said junction having a forward conduction threshold,

inductively coupling to said wafer high frequency oscillations for inducing eddy currents in said wafer,

said oscillations becoming amplitude modulated each time said wafer receives a pulse of said light, and

monitoring said amplitude modulation while varying the intensity of said pulsed light to determine a value of said pulsed light which charges said capacitance to a value beneath said threshold.

2. The method defined in claim 1 wherein said amplitude modulation is monitored while varying the intensity of said pulsed light to determine the maximum value thereof which charges said capacitance to a value beneath said threshold.

3. The method defined in claim 1 wherein said amplitude modulation is monitored by producing an oscilloscope decay time trace related to said amplitude modulation while varying the intensity of said pulsed light to determine a value thereof which causes the ratio of the initial slope of said trace to the terminal slope of said trace to be no greater than about 2:

1.

4. The method defined in claim 1 wherein said amplitude modulation is monitored by producing an oscilloscope decay time trace related to said amplitude modulation while varying the intensity of said pulsed light to determine the maximum value thereof which causes the ratio of the initial slope of said trace to the terminal slope of said trace to be no greater than about 2:

1.

5. A PN junction wafer manufacturing process wherein the method defined in claim 1 is utilized at a plurality of different times during said process.