Field effect transistor amplifier

• US 4,021,751 A
• Filed: 11/03/1975
• Issued: 05/03/1977
• Est. Priority Date: 11/15/1974
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Suzuki, Tadao
• Primary Examiner(s): Rolinec, Rudolph V.
• Assistant Examiner(s): Dahl, Lawrence J.
• Application Number:
  US05/628,147
• Time in Patent Office: 547 Days
• Field of Search: 330/13, 330/15, 330/22, 330/35, 330/40, 330/17, 330/18
• US Class Current: 330/253
• CPC Class Codes: H01L 29/00 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00
• CPC Class Codes: H03F 2200/516 Some amplifier stages of an amplifier use supply voltages of different value
• CPC Class Codes: H03F 2203/45498 the CSC comprising only resistors
• CPC Class Codes: H03F 2203/45702 the LC comprising two resistors
• CPC Class Codes: H03F 3/1855 with junction-FET devices
• CPC Class Codes: H03F 3/26 Push-pull amplifiers; Phase-splitters therefor duplicated single-ended push-pull arrangements or phase-splitters therefor H03F3/30
• CPC Class Codes: H03F 3/3044 Junction FET SEPP output stages H03F3/3008 takes precedence
• CPC Class Codes: H03F 3/45408 Complementary long tailed pairs having parallel inputs and being supplied in parallel
• CPC Class Codes: H03F 3/45466 Complementary non-cross coupled types

Abstract

A field effect transistor amplifier has a signal input circuit which preferably includes an A-class amplifier, a driving stage having first and second FETs driven in the same phase relation by an input signal applied to their gate electrodes from the signal input circuit, a first voltage source connected to the source electrodes of the first and second FETs, a resistor connected between the drain electrodes of the first and second FETs, an output stage having third and fourth FETs with the gate electrodes of the latter being connected to opposite ends of the resistor so that the voltage across the latter is applied as the DC bias voltage for the FETs of the output stage, a second voltage source connected to the drain electrodes of the third and fourth FETs, and an output terminal connected to the source electrodes of the third and fourth electrodes which are connected to each other. At least the FETs of the output stage are triode characteristic FETs and, if the gain of the A-class amplifier in the signal input circuit is insufficient, the FETs of the driving stage are also triode characteristic FETs.

Claims

1. A field effect transistor amplifier comprising first DC voltage source means, first and second field effect transistors each having gate, source and drain electrodes, a resistor connected between the drain electrodes of said first and second field effect transistors, means connecting the source electrodes of said first and second field effect transistors to said first DC voltage source means, input circuit means for applying to the gate electrodes of said first and second field effect transistors respective signals of the same polarity corresponding to an input signal to be amplified, second DC voltage source means, third and fourth field effect transistors each having gate, source and drain electrodes, the drain electrodes of said third and fourth field effect transistors being connected to said second DC voltage source means, the source electrodes of said third and fourth field effect transistors being connected to each other, an output terminal connected to the connected together source electrodes of said third and fourth field effect transistors, and means for applying the voltage across said resistor as a DC bias voltage to the gate electrodes of said third and fourth field effect transistors.

2. A field effect transistor amplifier according to claim 1;

in which at least each of said third and fourth field effect transistors is a triode characteristic field effect transistor.

3. A field effect transistor amplifier according to claim 1;

in which each of said first, second, third and fourth field effect transistors is a triode characteristic field effect transistor.

4. A field effect transistor amplifier according to claim 1;

in which said first and second field effect transistors have complementary characteristics, and said third and fourth field effect transistors have complementary characteristics.

5. A field effect transistor amplifier according to claim 1;

further comprising first and second voltage injecting means connecting said second DC voltage source means to said source electrodes of said first and second field effect transistors for applying a ripple voltage in said second DC voltage source means to said source electrode of said first and second field effect transistors, respectively, so that said voltage across said resistor is stabilized in respect to voltage fluctuations occurring in said second DC voltage source means.

6. A field effect transistor amplifier according to claim 5;

in which said means connecting said source electrodes of said first and second field effect transistors to said first DC voltage source means are constituted by second and third resistors, respectively, and said first and second voltage injecting means respectively include a fourth resistor and a fifth resistor connected between said second DC voltage source means and said source electrodes of said first and second field effect transistors, respectively.

7. A field effect transistor amplifier according to claim 6;

in which the first mentioned resistor and said fourth and fifth resistors have resistance values R₁, R₄ and R₅, respectively, which satisfy the following equations;

##EQU16## in which μ

₃ and μ

₄ are the voltage amplification factors of said third and fourth field effect transistors, respectively.

8. A field effect transistor amplifier according to claim 6;

in which said resistance values of said fourth and fifth resistors further satisfy the following equations;

##EQU17## in which I is the current flowing through said first resistor and said first and second field effect transistors for the pinch-off voltages of said third and fourth field effect transistors, and k is a constant for said third and fourth field effect transistors determined by the product of the respective pinch-off voltage and voltage amplification factor.

9. A field effect transistor amplifier according to claim 1;

in which each of said first, second, third and fourth field effect transistors is a triode characteristic field effect transistor; and

in which said input circuit means includes an A-class amplifying stage for driving said first and second field effect transistors.

10. A field effect transistor amplifier according to claim 9;

in which said A-class amplifying stage of the input circuit means includes fifth and sixth field effect transistors connected in complementary push-pull relationship to said first DC voltage source means for driving said first and second field effect transistors with the same phase relationship.

11. A field effect transistor amplifier according to claim 10;

further comprising negative voltage feedback means between said connected together source electrodes of said third and fourth field effect transistors and said A-class amplifying stage of the input circuit means.

12. A field effect transistor amplifier according to claim 9;

in which said A-class amplifying stage of the input circuit means includes a pair of differential amplifiers.

13. A field effect transistor amplifier according to claim 9;

in which said input circuit means further includes a differential amplifier preceding said A-class amplifying stage.