Hall element and method of manufacturing same

• US 4,021,767 A
• Filed: 07/11/1975
• Issued: 05/03/1977
• Est. Priority Date: 06/12/1975
• Status: Expired due to Term

• Current Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
• Original Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
• Inventors: Sudo, Michio, Nonaka, Kohei
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US05/594,974
• Time in Patent Office: 662 Days
• Field of Search: 338/32 H, 323/94 H, 324/45, 324/46, 310/DIG. 3, 357/27, 29/610, 29/576
• US Class Current: 338/32.00H
• CPC Class Codes: H10N 52/80 Constructional details
• CPC Class Codes: Y10T 29/49146 with encapsulating, e.g., potting, etc.

Abstract

A cleaved surface of a crystal is used as a substrate for evaporation, and a high mobility semiconductor is evaporated to a thickness of 0.5 to 1.5 μm to form a deposited thin semiconductor film, on which a first magnetizable member having a high magnetic permeability is applied with an adhesive. Subsequently the substrate is removed, and an electrode is formed on the exposed surface of the evaporated thin film, and a second magnetizable member is applied thereon with an adhesive. Where a special humidity resistance is required, a reinforcing layer of an electrically insulating and moisture-impervious inorganic material is formed directly on the evaporated thin semiconductor film before the first magnetizable member is applied.

Claims

1. A Hall element comprising:

an evaporated thin film of a semiconductor having a high mobility and having a thickness of 0.5 to 1.5μ

, separated from an evaporation substrate after evaporation;

input electrodes and output electrodes formed on one surface of the evaporated thin film;

a first magnetizable member bonded to said one surface of the evaporated thin film by a layer of adhesive disposed between said first member and said one surface; and

a second magnetizable member bonded to the other surface of the evaporated thin film by a layer of adhesive disposed between said second member and said other surface.

2. A Hall element according to claim 1, further including a reinforcing layer of an electrically insulating and moisture-impervious inorganic material which is formed in direct contact with said other surface of the evaporated thin film.

3. A Hall element according to claim 2, further including a protective layer of electrically insulating and moisture-impervious inorganic material which is formed in direct contact with said one surface of the evaporated thin film.