Control of vapor deposition

• US 4,024,291 A
• Filed: 09/21/1976
• Issued: 05/17/1977
• Est. Priority Date: 06/17/1975
• Status: Expired due to Term

• Current Assignee: Leybold-Heraeus GmbH & Company KG
• Original Assignee: Leybold-Heraeus GmbH & Company KG
• Inventors: Wilmanns, Ingo
• Primary Examiner(s): Kaplan, Morris
• Application Number:
  US05/728,833
• Time in Patent Office: 238 Days
• Field of Search: 118/7, 118/8, 118/4, 118/48-49.5, 427/8-10, 427/69, 427/70, 427/91, 427/99, 427/109, 427/124, 427/166, 427/167, 427/50-52, 427/237, 427/248-253, 427/255, 330/1 A, 330/10
• US Class Current: 427/10
• CPC Class Codes: C23C 14/547 using optical methods

Abstract

An arrangement for regulating the vapor deposited layer build-up in the production of deposited optically active thin layers on substrates in a vacuum. The optical characteristics of the deposited layer are measured continuously and the measurements are converted into proportional electrical signals. These signals are differentiated twice, with the second derivative serving to provide the zero-axis crossings of the signals. The vapor deposition process is interrupted dependent on the zero-axis crossings.

Claims

1. A method for regulating the vapor deposited layer build-up in the production of deposited optically active thin layers on substrates in a vacuum comprising the steps of:

measuring continuously the optical characteristics of the deposited layer;

converting the optical characteristics into proportional electrical signals;

differentiating said signals twice to obtain the second derivative;

deriving the zero-axis crossings of said signals from said second derivative; and

interrupting the deposition of said layers dependent on said zero-axis crossings, whereby a first of the differentiating signals controls the buildup of λ

/4 layers and a second of the differentiating signals controls the buildup of the λ

/8 layers.

2. The method as defined in claim 1 wherein the energy supplied for said vapor deposited layers is interrupted dependent on said zero-axis crossings.

3. The method as defined in claim 1 wherein said interrupting is effected by the step of inserting shielding means in the vapor path for said vapor deposited layers.

4. An arrangement for regulating the vapor deposited layer build-up in the production of deposited optically active thin layers on substrates in a vacuum comprising a vacuum chamber;

evaporator means in said vacuum chamber;

means for supplying power to said evaporator means;

means for controlling the power of said evaporator means;

substrate holding means in said vacuum chamber;

means for continuously measuring the optical characteristics of the vapor deposited layer during build-up;

means for converting the measured optical characteristics into proportional electrical signals, first differentiating means for differentiating said signals, second differentiating means connected in series with said first differentiating means for differentiating said signals a second time, the second derivative providing the zero-axis crossings of said signals;

comparator means having one input connected to said first differentiating means and another input connected to a nominal value function generator for producing a waveform signal independent from the optical characteristics of the deposited layer and corresponding to the desired change of the optical characteristics;

control means connected to the output of said comparator means for varying the evaporator power;

shield means connected to said second differentiating means for covering the evaporator means on said zero-axis crossings; and

switch means between said first differentiating means and said second differentiating means, said switch means connecting selectively said control means to said first differentiating means to control the build-up of λ

/4 layers and to said second differentiating means to control the build-up of λ

/8 layers.