Broadband, microwave, two-stage, stagger-tuned, field effect transistor amplifier

• US 4,025,873 A
• Filed: 08/17/1976
• Issued: 05/24/1977
• Est. Priority Date: 08/17/1976
• Status: Expired due to Term

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Chilluffo, Ronald L.
• Primary Examiner(s): Rolinec, Rudolph V.
• Assistant Examiner(s): Dahl, Lawrence J.
• Application Number:
  US05/715,083
• Time in Patent Office: 280 Days
• Field of Search: 330/21, 330/31, 330/35, 330/53, 330/56, 333/84 M, 333/10, 325/485, 325/488, 325/489
• US Class Current: 330/277
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/601 using FET's, e.g. GaAs FET's H03F3/607, H03F3/608 take precedence

Abstract

A microwave-integrated-circuit amplifier provides a broadband response in e region of 1-10 GHz. The amplifier includes: a microstrip which provides distributed circuit values for tuning; first and second microwave FETs included in the microstrip and tuned to the upper and lower cutoffs of the bandwidth, respectively; and a non-reciprocal microwave isolator which passes a signal in only one direction and is connected between the first and second microwave FETs.

Claims

1. A microwave integrated circuit amplifier for amplifying a wide bandwidth in the microwave region comprising:

microstrip means for providing distributed circuits for tuning;

first microwave FET means, including at least one microwave FET, connected to said microstrip and tuned by said microstrip to the upper cutoff of said bandwidth for providing a high-gain frequency response at the upper cutoff region of said bandwidth;

second microwave FET means, including at least one microwave FET, connected to said microstrip and tuned by said microstrip to the lower cutoff of said bandwidth for providing a high-gain frequency response at the lower cutoff region of said bandwidth; and

microstrip isolator means connected to said microstrip and further connected between said first and second microwave FET means for passing a signal in only one direction between said first and second microwave FET means.

2. The apparatus of claim 1 in which said first microwave FET means includes a single microwave FET.

3. The apparatus of claim 1 in which said second microwave FET means includes a single microwave FET.

6. The apparatus of claim 1 in which said microstrip includes:

a first pair of serial transmission line means connected to the input of said first microwave FET means, for providing the necessary input impedance for tuning said first microwave FET means to the upper-cutoff of said bandwidth;

a second pair of serial transmission line means connected to the input of said second microwave FET means for providing the necessary input impedance for tuning said second microwave FET means to the lower-cutoff of said bandwidth;

a third pair of serial transmission line means connected to the output of said second microwave FET means for providing the necessary output impedance for tuning said second microwave FET means to the lower-cutoff of said bandwidth.

4. A method for obtaining wide bandwidth amplification of a microwave signal with a microwave-integrated-amplifier comprising the steps of:

amplifying said microwave signal with a first microwave FET tuned, by means of distributed circuits of a microstrip, to the upper cutoff region of said bandwidth;

amplifying said first amplified microwave signal with a second microwave FET tuned, by means of distributed circuits of a microstrip, to the lower cutoff region of said bandwidth; and

providing isolation between said first and second microwave FET by a microwave isolator which passes signals in only one direction from the first to the second microwave FET.

5. A method for obtaining a wideband microwave response from a microwave-integrated-amplifier comprising the steps of:

tuning a first microwave FET, by means of distributed circuit elements of a microstrip, to the lower-cutoff region of said bandwidth;

tuning a second microwave FET, by means of distributed circuit elements of a microstrip, to the upper-cutoff region of said bandwidth; and

providing isolation between said first and second microwave FETs by a microwave isolator which passes signal in only one direction from the first to the second microwave FETs.