Semiconductor Hall element

• US 4,028,718 A
• Filed: 10/28/1975
• Issued: 06/07/1977
• Est. Priority Date: 12/25/1974
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Migitaka, Masatoshi, Kanda, Yozo
• Primary Examiner(s): Lynch, Michael J.
• Assistant Examiner(s): Davie, James W.
• Application Number:
  US05/626,454
• Time in Patent Office: 588 Days
• Field of Search: 357/27, 357/25, 357/56, 307/309
• US Class Current: 257/426
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices

Abstract

A semiconductor Hall element consists of a substantially rectangular main island and at least one small island of semiconductor material, one conductivity type disposed in an epitaxial semiconductor layer grown on a single crystal semiconductor substrate of the opposite conductivity type. In the main island, a pair of highly doped elongated current terminal regions of the one conductivity type are disposed, so that they are near and substantially parallel to a pair of sides of the main island, which are opposite to each other. At least a highly doped Hall signal voltage terminal semiconductor region of the one conductivity type is disposed in the small island. The Hall signal voltage terminal region has a protrusion having a small cross section, the extremity of which is slightly beyond one side of the main island which is perpendicular to the current terminal regions.

Claims

1. A semiconductor Hall element comprising:

a semiconductor substrate including a first semiconductor layer of a first conductivity type and having a first surface;

a first semiconductor region of a second conductivity type, opposite said first conductivity type and having a substantially rectangularly shaped surface area, disposed beneath and extending to said first surface of sadi substrate;

a second semiconductor region of said second conductivity type, having a prescribed shaped surface area less than that of said first semiconductor region disposed beneath and extending to said first surface of said substrate, adjacent to, but spaced apart from, a first side of said first semiconductor region;

third and fourth elongated semiconductor regions of said second conductivity type and an impurity concentration higher than that of said first semiconductor region, disposed in said first semiconductor region along second and third parallel sides thereof perpendicular to said first side of said first semiconductor region;

a fifth semiconductor region, of said second conductivity type and having an impurity concentration higher than that of said second semiconductor region, disposed in said second semiconductor region;

a sixth semiconductor region, of said second conductivity type, disposed beneath and extending to said first surface of said substrate and being contiguous with said first and second semiconductor regions; and

a seventh semiconductor region of said second conductivity type and having an impurity concentration higher than that of said first semiconductor region, disposed in said sixth semiconductor region so as to be contiguous with said fifth semiconductor region and overlapping said first side of said first semiconductor region.

2. A semiconductor Hall element according to claim 1, said substrate further comprising a second semiconductor layer of said first conductivity type upon which said first semiconductor layer is disposed, so that said first, second, fifth, sixth and seventh semiconductor regions are surrounded by isolation semiconductor material of said first conductivity type.

3. A semiconductor Hall element according to claim 1, wherein the semiconductor material of which said first semiconductor layer of said substrate is made is a material selected from the group consisting of silicon and gallium arsenide.

4. A semiconductor Hall element according to claim 3, wherein said semiconductor material is silicon.

5. A semiconductor Hall element according to claim 3, wherein said semiconductor material is gallium arsenide.

6. A semiconductor Hall element according to claim 1, wherein the distance by which said seventh region overlaps said first side of said first semiconductor region is greater than 1 μ

m but less than one-quarter of the length of said third and fourth semiconductor regions along the second and third parallel sides of said first semiconductor region.

7. A semiconductor Hall element according to claim 1, wherein the distance by which said seventh region overlaps said first side of said first semiconductor region is greater than 5 μ

m but less than one-quarter of the length of said third and fourth semiconductor regions along the second and third parallel sides of said first semiconductor region.

8. A semiconductor Hall element according to claim 1, further comprising:

an eighth semiconductor region of said second conductivity type, having a prescribed shaped surface area less than that of said first semiconductor region, disposed beneath and extending to said first surface of said substrate, adjacent to, but spaced apart from, a fourth side of said first semiconductor region, parallel with said first side thereof;

a ninth semiconductor region, of said second conductivity type, and having an impurity concentration higher than that of said eighth semiconductor region, disposed in said eighth semiconductor region;

a tenth semiconductor region, of said second conductivity type, disposed beneath and extending to said first surface of said substrate and being contiguous with said first and second semiconductor regions; and

an eleventh semiconductor region, of said second conductivity type and having an impurity concentration higher than that of said first semiconductor region, disposed in said tenth semiconductor region so as to be contiguous with said ninth semiconductor region and overlapping said fourth side of said first semiconductor region.

9. A semiconductor Hall element comprising:

a semiconductor substrate of a first conductivity type having a first surface;

a semiconductor layer of a second conductivity type, opposite said first conductivity type, disposed on said substrate and having

a first substantially rectangularly shaped portion,

a second rectangularly shaped portion, smaller than said first portion, adjacent to, but spaced apart from, a first side of said first portions, and

a third portion narrower than said second portion interconnecting said first and second portions;

first and second elongated semiconductor regions of said second conductivity type and an impurity concentration higher than that of said semiconductor layer, disposed in said first portion of said semiconductor layer along second and third parallel sides thereof, perpendicular to said first side of said first portion of said semiconductor layer;

a third semiconductor region of said second conductivity type and having an impurity concentration higher than that of said semiconductor layer, disposed in said second portion of said semiconductor layer; and

a fourth semiconductor region of said second conductivity type, and having an impurity concentration higher than that of said semiconductor layer, disposed in said third portion of said semiconductor layer so as to be contiguous with said third region and overlapping said first side of said first portion of said semiconductor layer.

10. A semiconductor Hall element according to claim 9, wherein the semiconductor material of which said substrate is made is a material selected from the group consisting of silicon and gallium arsenide.

11. A semiconductor Hall element according to claim 10, wherein said semiconductor material is gallium arsenide.

12. A semiconductor Hall element according to claim 10, wherein said semiconductor material is silicon.

13. A semiconductor Hall element according to claim 9, wherein the distance by which said fourth region overlaps said first side of said first portion of said semiconductor layer is greater than 1 μ

m but less than a quarter of the length of said first and second elongated semiconductor regions along the second and third parallel sides of said first portion of said semiconductor layer.

14. A semiconductor Hall element according to claim 9, wherein

said semiconductor layer further comprises

a fourth rectangularly shaped portion, smaller than said first portion, adjacent to, but spaced apart from, a fourth side of said first portion, parallel with said first side thereof, and

a fifth portion narrower than said fourth portion interconnecting said first and fourth portions;

and further including

a fifth semiconductor region, of said second conductivity type and having an impurity concentration higher than that of said semiconductor layer, disposed in said fourth portion of said semiconductor layer; and

a sixth semiconductor region of said second conductivity type, and having an impurity concentration higher than that of said semiconductor layer, disposed in said fifth portion of said semiconductor layer so as to be contiguous with said fifth region and overlapping said fourth side of said first portion of said semiconductor layer.