Silicon single crystal charge storage diode

• US 4,032,954 A
• Filed: 06/01/1976
• Issued: 06/28/1977
• Est. Priority Date: 06/01/1976
• Status: Expired due to Term

• Current Assignee: JVC Americas Corporation (JVC Kenwood Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Fraas, Lewis M., Grinberg, Jan, Braatz, Paul O., Bleha, William P. Jr.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/691,652
• Time in Patent Office: 392 Days
• Field of Search: 357/63, 357/64, 357/30, 357/31, 357/90, 350/160 LC
• US Class Current: 257/460
• CPC Class Codes: G02F 1/1354 having a particular photoconducting structure or material

Abstract

There is disclosed a silver doped silicon single crystal charge storage photodiode substrate suitable for use in an alternating current driven liquid crystal light valve. The gain capability of the charge storage photodiode makes it possible to construct a single crystal substrate ac light valve very similar in structure to that presently being used with a cadmium sulphide photodiode, but having improved operating characteristics and benefitting from a more fully developed manufacturing technology for silicon devices. One specific embodiment of such a single crystal substrate is a silicon substrate doped with a slow recombination center element such as silver.

Claims

1. A photodiode for an alternating current driven light valve of the type wherein the photocapacitance of a light responsive semiconductor layer of said diode which is supported on a transparent substrate of said valve to receive light transmitted therethrough can be modulated in response to changes in the intensity of such incident light, the improvement in said diode comprising:

(a) first and second semiconductor layers forming the rectifying junction of a charge storage photodiode;

(b) said first layer being a light responsive single crystal silicon photoconductor the photocapacitance of which can be modulated in response to changes in the intensity of said incident light and said second layer being a semiconductor having a polarity opposite to that of said first layer;

(c) said first layer comprising a first region of semiconductor material having a low density of defect centers and a second region of semiconductor material having a higher density of defect centers, said second region being contiguous with said junction and said first region being contiguous with said second region and being exposed to receive said incident light which is effective to generate charge carriers which are stored in said second region and which change the photocapacitive depletion width adjacent said junction to enhance the sensitivity of said diode, the defect centers of said second region of said single crystal silicon first layer forming slow recombination centers.

2. A device as in claim 1 wherein said slow recombination centers are formed by an element diffused into said first layer of silicon.

3. A device as in claim 2 wherein said dopant consists of silver atoms.

4. A device as in claim 1 wherein said slow recombination centers are formed by ion implantation induced damage centers.

5. A device as in claim 1 wherein said slow recombination centers are formed by gamma ray induced damage centers.