Method of manufacturing integral transducer assemblies employing built-in pressure limiting

• US 4,040,172 A
• Filed: 08/02/1976
• Issued: 08/09/1977
• Est. Priority Date: 05/01/1975
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Mallon, Joseph R.
• Primary Examiner(s): Hall, Carl E.
• Application Number:
  US05/710,570
• Time in Patent Office: 372 Days
• Field of Search: 338/2, 338/4, 338/36, 338/42, 338/47, 73/88.5 R, 73/88.5 SD, 29/610 SG, 29/610 R, 29/613, 29/619, 29/620, 29/580, 357/26
• US Class Current: 438/51
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: H01C 10/10 adjustable by mechanical pressure or force
• CPC Class Codes: H01C 17/00 Apparatus or processes specially adapted for manufacturing resistors providing fillings for housings or enclosures H01C1/02; reducing insulation surrounding a resistor to powder H01C1/03; manufacture of thermally variable resistors H01C7/02, H01C7/04
• CPC Class Codes: Y10T 29/49098 Applying terminal
• CPC Class Codes: Y10T 29/49099 Coating resistive material on a base
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

A transducer of an "H" shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.

Claims

1. A method for fabricating a semiconductor transducer, comprising the steps of:

a. forming a first depression on a first surface in a semiconductor wafer, said depression as formed being of a predetermined depth and having a plurality of "finger-like" projections extending from the periphery,

b. diffusing a serpentine piezoresistor within said depression and having a resistance line width approximately equal to said predetermined depth,

c. metallizing the surface of said depression to form a series of terminal areas extending into said projections,

d. covering said depression with a glass sheet,

e. bonding leads to said terminal areas within said projections.

2. The method according to claim 1 including the further steps of:

a. forming a second depression on a surface of said semiconductor opposite said first surface, said depression being slightly less in diameter than that of said first depression.

3. The method according to claim 1 wherein said step of covering includes the step of diffusion bonding said glass sheet to said semiconductor wafer about the periphery surrounding said first depression.

4. The method according to claim 1 wherein said first depression is formed by etching said wafer.

5. The method according to claim 1 wherein said predetermined depth is between 0.01 to 1.0 mil.

6. The method according to claim 2 wherein said second depression is of a depth approximately equal to said predetermined depth.