Semiconductor element having a polymeric protective coating and glass coating overlay

• US 4,040,874 A
• Filed: 01/10/1977
• Issued: 08/09/1977
• Est. Priority Date: 08/04/1975
• Status: Expired due to Term

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Yerman, Alexander J.
• Primary Examiner(s): Ozaki, G.
• Application Number:
  US05/757,887
• Time in Patent Office: 211 Days
• Field of Search: 148/33.3, 148/33, 148/187, 29/588, 357/39, 427/93
• US Class Current: 148/33.3
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 23/291 Oxides or nitrides or carbides, e.g. ceramics, glass
• CPC Class Codes: H01L 23/296 Organo-silicon compounds
• CPC Class Codes: H01L 23/3171 the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/3192 Multilayer coating
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane
• CPC Class Codes: Y10T 428/31721 Of polyimide

Abstract

A multilayer passivation-encapsulation for a semiconductor element is provided by a suitable polymer layer disposed on the device and overcoated with a glass layer for hermeticity.

Claims

1. A semiconductor element comprising:

a body of semiconductor material having at least two regions of opposite type conductivity and a P-N junction disposed between, and formed by the abutting surfaces of, each pair of regions of opposite type conductivity;

an end portion of at least one P-N junction exposed at a surface of the body;

a layer of a protective coating material disposed on the exposed end portion of the at least one P-N junction;

the protective coating material is a polymer which is, when cured, one selected from the group consisting of the reaction product of a silicon-free organic diamine and an organic tetracarboxylic dianhydride, a silicon-free organic diamine, an organic tetracarboxylic dianhydride and a polysiloxane diamine and a blend of polyimide compound of recurring structural units of the formula;

##STR10## with a polyimide, as required, composed of recurring structural units of the formula;

##STR11## wherein the molar proportion of the latter is from 0 to 50 mol percent wherein

R is a divalent hydrocarbon radical,

R'"'"' is a monovalent hydrocarbon radical,

R" is a tetravalent organic radical,

Q is a divalent silicon-free organic radical

which is the residue of an organic diamine,

x is a whole number equal to at least 1 and advantageously from 1 to 8 and as high as 1 to 10,000 or more,

m is an integer greater than 1

n is zero or an integer greater than 0, and

at least one layer of a glass material disposed on the layer of protective coating material.

2. The semiconductor element of claim 1 wherein

m is from 10 to 10,000 and n is from 1 to 10,000.

3. The semiconductor element of claim 1 wherein m is 0.

4. The semiconductor element of claim 3 wherein

m is from 10 to 10,000.

5. The semiconductor element of claim 1 wherein

the coefficient of thermal expansion of the glass material approximates the coefficient of thermal expansion of the material of the body.

6. The semiconductor element of claim 5 wherein n is 0.

7. The semiconductor element of claim 5 and including

a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material.

8. The semiconductor element of claim 5 wherein

the glass material is one selected from the group consisting of borosilicate glass and phosphosilicate glass.

9. The semiconductor element of claim 8 and including

a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material.

10. The semiconductor element of claim 8 wherein

the thickness of the glass material is from 0.1 micrometer to 10 micrometer.

11. The semiconductor element of claim 10 wherein

the thickness of the glass material is 3 micrometers.

12. The semiconductor element of claim 11 and including

a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material, and

the thickness of the second layer of glass is 2000A.

13. The semiconductor element of claim 12 wherein

the semiconductor material is silicon.

14. The semiconductor element of claim 12 wherein

the glass material is borosilicate and comprises from 15 to 25 percent mol of B₂ O₃ therein.

15. The semiconductor element of claim 14 wherein

the glass material comprises 19 ±

2 mol percent B₂ O₃.

16. The semiconductor element of claim 15 wherein

the semiconductor material is silicon.

17. The semiconductor element of claim 10 wherein

the glass material is borosilicate and comprises from 15 to 25 mol percent of B₂ O₃ therein.

18. The semiconductor element of claim 17 wherein

the semiconductor material is silicon.

19. The semiconductor element of claim 17 wherein

m is from 10 to 10,000 and n is from 1 to 10,000.

20. The semiconductor element of claim 17 wherein

the glass material comprises 19 ±

2 mol percent B₂ O₃.

21. The semiconductor element of claim 20 wherein

the semiconductor material is silicon.

22. The semiconductor element of claim 10 and including

a second layer of glass comprising silicon dioxide disposed on the at least one layer of glass material, and

the thickness of the second layer of glass is from 1000A to 5000A.

23. The semiconductor element of claim 22 wherein

the semiconductor material is silicon.

24. The semiconductor element of claim 22 wherein

the glass material is borosilicate and comprises from 15 to 25 mol percent of B₂ O₃ therein.

25. The semiconductor element of claim 24 wherein

the glass material comprises 19 ±

2 mol percent B₂ O₃.

26. The semiconductor element of claim 25 wherein

the semiconductor material is silicon.