Apparatus for depositing thin layers of materials by reactive spraying in a high-frequency inductive plasma

• US 4,050,408 A
• Filed: 11/19/1975
• Issued: 09/27/1977
• Est. Priority Date: 11/22/1974
• Status: Expired due to Term

• Current Assignee: The European Atomic Energy Community (Euratom)
• Original Assignee: The European Atomic Energy Community (Euratom)
• Inventors: Beucherie, Pierre
• Primary Examiner(s): Rimrodt, Louis K.
• Application Number:
  US05/633,263
• Time in Patent Office: 678 Days
• Field of Search: 118/49, 118/49.1, 118/50, 118/50.1, 118/300, 118/620, 118/623, 118/629, 313/362, 313/363, 313/359, 313/161, 313/231.3, 204/192 IP, 219/121 P
• US Class Current: 118/723.0VE
• CPC Class Codes: C23C 14/0084 Producing gradient compositions
• CPC Class Codes: C23C 14/228 Gas flow assisted PVD deposition

Abstract

A method and apparatus for depositing thin layers of insulating or slightly conductive materials involves reactive spraying through high-frequency inductive plasma. The conductive component of the material to be deposited is sprayed in a first chamber through which an ionizable inert gas travels, the sprayed particles then passing through a second chamber in which a substrate is placed and to which a reactive gas is supplied.

Insulating and weakly inductive materials such as oxides, carbide and nitrides may be deposited at a rate substantially comparable with the rate for conductive materials to obtain high quality uniform deposits.

Claims

1. An apparatus for depositing thin layers by reactive spraying a high frequency inductive plasma comprising a sealing-tight vessel connected to a vacuum generation system containing means which are adapted to produce a high-frequency electromagnetic field and comprise a material which can be sprayed by the field, at least one surface serving as a substrate for the thin layer deposition, means for injecting gas into the vessel near the surface and means for injecting a gas into the vessel near the means applying the electromagnetic field, the gases comprising a reactive gas and an inert gas which can be ionized by the electromagnetic field, said vessel comprising partition means dividing it into a first chamber which contains the means applying the electromagnetic field and is connected to the means supplying an ionizable inert gas and at least a second chamber which contains the substrate or substrates and is connected to the means for supplying reactive gas, the partition means being formed with an aperture which connects the chambers and is disposed on the straight path between the substrates and the means for applying the electromagnetic field, the vessel being provided with connecting ducts to the vacuum generation system, the ducts being so disposed with respect to the chambers that the reactive gas cannot flow into the first chamber.

2. An apparatus according to claim 1, wherein the partition means comprises a wall disposed between the substrate or substrates and the means for applying the electromagnetic field.

3. An apparatus according to claim 1, wherein the partition means comprises two walls which together bound the chamber containing the means for applying the electromagnetic field.

4. An apparatus according to claim 1, wherein the partition means comprises a cylindrical wall enclosing the means for applying the electromagnetic field.

5. An apparatus according to claim 4, wherein the communication aperture is a slot round the entire perimeter of the cylindrical wall.

6. An apparatus according to claim 1 wherein the communication aperture is at least one orifice.

7. An apparatus according to claim 1 additionally comprising an intermediate chamber between the chamber containing the means for applying the electromagnetic field and the chamber containing the substrate or substrates, the intermediate chamber being supplied with a different reactive gas from the chamber or chambers containing the substrates, or with the same gas but in different proportions.

8. An apparatus according to claim 1 wherein only the chamber or chambers containing the substrates are provided with connecting ducts to the vacuum generation system.

9. An apparatus according to claim 1 wherein each chamber of the vessel is connected to the vacuum generation system by an individual connecting duct.