Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made

• US 4,062,714 A
• Filed: 07/13/1976
• Issued: 12/13/1977
• Est. Priority Date: 09/16/1975
• Status: Expired due to Term

• Current Assignee: Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe MbH
• Original Assignee: Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe MbH
• Inventors: Griesshammer, Rudolf, Koppl, Franz, Hamster, Helmut, Goppinger, Alois, Thalmeier, Josef
• Primary Examiner(s): Rutledge, L. Dewayne
• Assistant Examiner(s): Saba, W. G.
• Application Number:
  US05/704,889
• Time in Patent Office: 518 Days
• Field of Search: 148/174, 148/175, 427/88, 427/248 R, 156/612-614, 156/304, 423/348-350, 264/60, 264/61, 264/65, 264/66, 264/81, 264/DIG. 57, 264/DIG. 64, 264/82, 264/104, 264/261
• US Class Current: 156/304.6
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C30B 31/10 Reaction chambers; Selection of materials therefor

Abstract

A process for making hollow silicon bodies by decomposition from a gaseousompound containing silicon and depositing said silicon on heated carrier bodies, which comprises assembling in a decomposition device a number of board-shaped members of silicon to form a hollow carrier body, heating said body to the decomposition temperature of the gaseous compound, introducing the gas into the device whereby it is thermally decomposed, causing the silicon released thereby to become inseparately united with the hollow carrier body, the hollow silicon body so formed being immediately available for use in the semiconductor industries. The invention also comprises the silicon bodies so made.

Claims

1. A process for making hollow silicon bodies by decomposition from a gaseous compound containing silicon and depositing said silicon on heated carrier bodies, which comprises arranging in a decomposition reactor a plurality of board-shaped members of silicon in a geometrical pattern with the edges of adjacent members abutting one another to form a hollow carrier body, heating said body to the decomposition temperature of the gaseous compound by the passage of direct electric current therethrough, introducing the gas into the device whereby it is thermally decomposed, causing the silicon released thereby to become inseparately united with the hollow carrier body, the hollow silicon body so formed being immediately available for use in the semi-conductor industries.