Integral transducer assemblies employing built-in pressure limiting

• US 4,063,209 A
• Filed: 05/01/1975
• Issued: 12/13/1977
• Est. Priority Date: 05/01/1975
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Mallon, Joseph R.
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US05/573,624
• Time in Patent Office: 957 Days
• Field of Search: 338/2, 338/4, 338/47, 338/36, 338/42, 73/88.5 SD, 357/26, 29/580
• US Class Current: 338/4
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: H01C 10/10 adjustable by mechanical pressure or force
• CPC Class Codes: H01C 17/00 Apparatus or processes specially adapted for manufacturing resistors providing fillings for housings or enclosures H01C1/02; reducing insulation surrounding a resistor to powder H01C1/03; manufacture of thermally variable resistors H01C7/02, H01C7/04

Abstract

A transducer of an H-shaped cross section employs a depression relatively equal to the line width of a diffused piezoresistor located in said depression. The depression is sealed by means of a glass member which acts as a "stop" for the transducer for all forces in excess of a rated force which causes a maximum diaphragm deflection relatively equal to the depth of said depression as selected in accordance with said resistor line width and the overall diaphragm diameter.

Claims

1. An electromechanical transducer for responding to the magnitude of an applied force, comprising:

a. a semiconductor member having a depression of a predetermined depth located on a first surface thereof,

b. at least one piezoresistive element diffused within said depression and located relatively centrally and comprising a given line configuration having a line width selected in accordance to said predetermined depth,

c. pressure limiting means including a layer of glass coupled to said semiconductor member to cover said depression to restrain said semiconductor material containing said element from moving beyond said pressure limiting means.

2. The electromechanical transducer according to claim 1 wherein said semiconductor member is silicon and said layer of glass having a diameter slightly larger than that of said depression to cover the same and coupled to said silicon member by a diffusion bond.

3. The electromechanical transducer according to claim 1 wherein said depression is generally circular in shape.

4. The electromechanical transducer according to claim 1 wherein said predetermined depth is between 0.01 to 1.0 mils.

5. An electromechanical transducer for responding to the magnitude of an applied force, comprising:

a. a semiconductor member having a depression of a predetermined depth and of a given surface dimension located on a first surface thereof,

b. at least one piezoresistive element diffused within said depression in a relatively central region thereof, and comprising a given line configuration having a line width selected in accordance with said predetermined depth,

c. a sheet of glass of a dimension greater than said surface dimension secured to said semiconductor member to cover said depression, said glass sheet having a plurality of apertures located on the surface thereof and aligned to surround said central region within a non-active area,

d. output leads coupled to said piezoresistive elements and directed through said apertures in said glass sheet.

6. An electromechanical transducer for responding to the magnitude of an applied force, comprising:

a. a semiconductor member having a depression of a predetermined depth located on a first surface thereof,

b. at least one piezoresistive element diffused within said depression and located relatively centrally and comprising a given line configuration having a line width selected in accordance with said predetermined depth,

c. a sheet of glass coupled to said semiconductor member for covering said depression to restrain said semiconductor material containing said element from moving beyond the position occupied by said sheet.

7. The transducer according to claim 6 wherein said depression is generally circular in shape with extending finger-like projections.

8. The transducer according to claim 7 wherein said glass sheet has a plurality of apertures located therein and each aligned with an end portion of a selected one of said projections for accommodating a lead wire.

9. The transducer according to claim 7 wherein said glass sheet is larger than said depression, but not large enough to cover the outermost portion of said extending finger-like projections to form a series of wire accommodating apertures about the periphery of said glass sheet and said outermost portion of said finger-like projections and a second depression formed on an opposite surface of said semiconductor member and positioned relatively coaxially with said depression on said first surface, said second depression being of a diameter less than said depression on said first surface to define an active deflection area for said semiconductor member.

10. An electromechanical transducer for responding to the magnitude of an applied force, comprising:

a. a semiconductor member having an H-shaped cross section with a top depression and a bottom depression, each of a predetermined depth and located relatively coaxially, one on a top surface and one on a bottom surface of said semiconductor, with the area between said depressions forming the central arm of said "H" to define an active region of a diaphragm adapted to deflect upon application of said force thereto,

12. The transducer according to claim 10 wherein said top depression has a plurality of finger-like projections extending therefrom and containing terminal means coupled to said piezoresistive element, and said bottom depression of a diameter less than the total diameter of said top depression such that said active region of said diaphragm does not include at least a portion of said finger-like projections.

14. The apparatus according to claim 12 further including at least one piezoresistor element mounted on said area and located between said arms of said U;

said element positioned relatively centrally with respect to said arms of said U.

11. b. at least one piezoresistive element diffused on said central arm of said "H" within said active area, said piezoresistive element comprising a serpentine line configuration of a line width relatively equal to the depth of said depressions,

c. first and second glass sheets, one secured to said top surface and one secured to said bottom surface to cover said depressions to form a barrier for restraining said diaphragm from deflecting beyond said glass sheets for all directions of forces applied to said top or bottom surfaces.

13. Apparatus for use as a diaphragm with an integral stop for positioning pressure transducer elements thereon, comprising:

a. a housing including a central depression of a relatively small depth on a surface thereof, said housing being of a U-shaped cross section with the area located between the arms of said "U" defining a diaphragm portion and being of a thickness for deflecting readily upon application of a pressure thereto,

b. a layer of glass secured relatively congruent with said surface of said housing and bonded to the top portion of the arms of said U to cover said depression and to serve as a stop for deflections of said diaphragm exceeding the length of said arms.

15. The apparatus according to claim 13 further including a second depression formed beneath said area containing said piezoresistive element.