Semiconductor component with dielectric carrier and its manufacture
First Claim
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1. A process for the production of a component assembly incorporating a flattened, integrated semiconductor circuit of the type having a plurality of discrete sites of doped, semiconductor material which discrete sites are interconnected together in a predetermined manner by layered paths of conductive material, said process comprising the steps of:
- A. forming a said semiconductor circuit on an n+ conducting silicon wafer by depositing an n- conductive monocrystalline epitaxial silicon layer thereon, diffusing p-conducting doping material into said epitaxial layer selectively to form doped zones, depositing an insulative layer selectively thereover, and depositing electrically conductive paths selectively thereover,B. forming a layer of polyamide resin over the resulting said semiconductor circuit,C. heating said layer of polyamide resin to convert same into a layer of polyimide resin,D. selectively etching away portions of said n+ silicon wafer and said n- epitaxial silicon layer.
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Abstract
A semiconductor component of a semiconductor or circuit system is provided. The circuit incorporates a dielectric carrier comprised of synthetic material. The circuit is provided with plate-shaped semiconductor islands. The islands possess doping layers and are interconnected as desired with a thin film wiring. A process for the production of such product is also provided.
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Citations
8 Claims
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1. A process for the production of a component assembly incorporating a flattened, integrated semiconductor circuit of the type having a plurality of discrete sites of doped, semiconductor material which discrete sites are interconnected together in a predetermined manner by layered paths of conductive material, said process comprising the steps of:
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A. forming a said semiconductor circuit on an n+ conducting silicon wafer by depositing an n- conductive monocrystalline epitaxial silicon layer thereon, diffusing p-conducting doping material into said epitaxial layer selectively to form doped zones, depositing an insulative layer selectively thereover, and depositing electrically conductive paths selectively thereover, B. forming a layer of polyamide resin over the resulting said semiconductor circuit, C. heating said layer of polyamide resin to convert same into a layer of polyimide resin, D. selectively etching away portions of said n+ silicon wafer and said n- epitaxial silicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification