Semiconductor solar energy device

• US 4,070,689 A
• Filed: 12/31/1975
• Issued: 01/24/1978
• Est. Priority Date: 12/31/1975
• Status: Expired due to Term

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Coleman, Michael G., Restrepo, Fabio
• Primary Examiner(s): Miller, Jr., Stanley D.
• Assistant Examiner(s): Davie, James W.
• Application Number:
  US05/645,572
• Time in Patent Office: 755 Days
• Field of Search: 357/30, 357/32, 357/54, 357/71, 357/31, 136/89 CC
• US Class Current: 136/255
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

This disclosure relates to a semiconductor solar energy device which is of the PN-type and utilizes a dielectric anti-reflective coating on the side of the device that faces the sunlight. The fabrication techniques used in making this semiconductor device include the use of ion implantation to form doped or diffused regions in the device. One of the ion implanted regions located on the side of the device that is subjected to the sunlight is configured in order to permit metal ohmic contact to be made thereto without shorting through the doped region during sintering of the metal contacts to the semiconductor substrate. The dielectric anti-reflective coating, in one embodiment, is a composite of silicon dioxide and silicon nitride layers. The device is designed to permit solder contacts to be made to the P and N regions thereof without possibility of shorting to semiconductor regions of opposite type conductivity.

Claims

1. A semiconductor solar energy device comprising, in combination, a silicon substrate of one type conductivity having a doped region of the opposte type conductivity, said doped region being beneath and extending to a first surface of said substrate, metal ohmic contacts in electrical contact with said substrate and said doped region of the opposite type conductivity, respectively, and an anti-reflective dielectric coating in contact with said first surface of said silicon substrate and in contact with a surface of said doped region of the opposite type conductivity, said anti-reflective coating comprising a thin layer of silicon dioxide on said first surface of said silicon substrate and a thicker layer of silicon nitride on said layer of silicon dioxide, said doped region of the opposite type conductivity comprising a thin region in contact with said anti-reflective coating and a thicker region located beneath an opening in said anti-reflective coating where at least one of said metal ohmic contacts is in contact with said doped region of the opposite type conductivity.

2. A semiconductor solar energy device in accordance with claim 1 wherein said thin region of said doped region of the opposite type conductivity has a thickness less than about 0.3 microns, said thicker region of said doped region of the opposite conductivity type having a thickness greater than 0.3 microns.

3. A semiconductor solar energy device in accordance with claim 2 wherein said silicon dioxide layer has a thickness in the range of between about 75 to about 100 Angstroms, said silicon nitride layer has a thickness in the range of about 600 to about 1,300 Angstroms.

4. A semiconductor solar energy device in accordance with claim 3 wherein said silicon nitride layer has a thickness of about 900 Angstroms.

5. A semiconductor solar energy device in accordance with claim 1 wherein said semiconductor substrate has a first region of said one type conductivity located at a second surface of said substrate, said first region of said one type conductivity having a higher concentration of impurities than said substrate of said one type conductivity, one of said metal ohmic contacts being in contact with said first region of said one type conductivity;

another of said metal ohmic contacts being in electrical contact with said doped region of the opposite type conductivity;

including a first solder metal contact in electrical contact with said metal ohmic contact to said first region of said one type conductivity, and a second separate solder metal contact in electrical contact with said metal ohmic contact that is in electrical contact with said doped region of opposite type conductivity.