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Radiation hardened P-I-N and N-I-P solar cells

  • US 4,072,541 A
  • Filed: 03/03/1977
  • Issued: 02/07/1978
  • Est. Priority Date: 11/21/1975
  • Status: Expired due to Term
First Claim
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1. A radiation hardened solar cell comprising a high purity nominally intrinsic silicon substrate having a resistivity exceeding 100 Ω

  • cm and a thickness of less than 10 mils, said substrate having a first region of one conductivity type formed within one surface of the substrate thereby providing a first junction, and a second region of opposite conductivity type formed within the opposing surface of the substrate thereby providing a second junction, one of said surfaces forming the back surface of the solar cell and being reflective; and

    other of said surfaces forming the front surface of said solar cell and being non-reflective.

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