CMOS comparator circuit and method of manufacture

• US 4,075,509 A
• Filed: 10/12/1976
• Issued: 02/21/1978
• Est. Priority Date: 10/12/1976
• Status: Expired due to Term

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Redfern, Thomas P.
• Primary Examiner(s): Anagnos, Larry N.
• Application Number:
  US05/731,269
• Time in Patent Office: 497 Days
• Field of Search: 307/251, 307/304, 307/350, 307/355, 307/352, 307/353, 307/240, 307/241, 307/242, 307/243, 307/200 B, 357/23, 357/41
• US Class Current: 327/124
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H03K 5/249 using clock signals

Abstract

A chopper stabilized comparator which compares two low level DC signals, and converts these signals to an AC signal which is amplified by AC amplifiers. The AC amplifier output is proportional to the difference between the two DC signals. The circuit has the advantage that it does not have any DC offset terms, for example, it does not drift with temperature.

The comparator is implemented in CMOS technology wherein the actual physical layout of the circuit is chosen such that changes in mask orientation during the fabrication process have no effect upon the proper operation of the circuit.

Claims

1. In a chopper stabilized amplifier including an amplifying section having input and output terminals, switch means coupled between said input and output terminals for periodically coupling said terminals together, and dummy transistor means for suppressing transient switching pulses produced at said input terminal by said switch means, means for combining said dummy transistor with said switch means whereby said transient suppression is rendered insensitive to gate alignment and lateral diffusion errors, said combination comprising:

dummy transistor means having source, gate and drain electrodes;

switch transistor means having a common drain electrode, a pair of source electrodes, and a pair of gate electrodes, each one of said pair of source electrodes having a length equal to the length of said dummy transistor source electrode and a spacing from said common drain electrode equal to the source to drain spacing in said dummy transistor;

means coupling said dummy transistor source and drain electrodes to said common drain electrode of said switch transistor means and means coupling said pair of gate electrodes of said switch transistor means together whereby said switch transistor means has an effective channel width of twice that of said dummy transistor means and said common drain electrode of said switch transistor means along with said source and drain of said dummy transistor means comprise a circuit node; and

means for switching said gate of said dummy transistor means in complementary fashion with said pair of gate electrodes of said switch transistor means whereby the switching transients at said circuit node cancel.

2. The structure of claim 1 wherein said pair of source electrodes of said switch transistor means are located on opposite sides of said common drain electrode.

3. The structure of claim 2 wherein said pair of gate electrodes of said switching transistor and said gate electrode of said dummy transistor means are arrayed in a parallel configuration.