Removal of thin films from substrates by laser induced explosion

• US 4,081,653 A
• Filed: 12/27/1976
• Issued: 03/28/1978
• Est. Priority Date: 12/27/1976
• Status: Expired due to Term

• Current Assignee: AT&T, Inc.
• Original Assignee: Western Electric Co., Inc. (Nokia Corporation)
• Inventors: Zaleckas, Vincent Joseph, Koo, Jackson Chik-Yun
• Primary Examiner(s): Gwinnell, Harry J.
• Application Number:
  US05/754,293
• Time in Patent Office: 456 Days
• Field of Search: 219/68, 219/121 LM, 219/121 L, 219/121 EM, 346/1, 346/76 L, 346/135, 427/53, 427/96, 427/271, 427/272, 427/444, 427/146, 101/401.1, 101/467, 101/471, 358/297, 96/27 R, 96/27 E
• US Class Current: 219/121.68
• CPC Class Codes: B23K 26/009 using a non-absorbing, e.g. transparent, reflective or refractive, layer on the workpiece using a mask on the workpiece B23K26/066
• CPC Class Codes: B23K 26/0661 disposed on the workpiece
• CPC Class Codes: B23K 26/361 for deburring or mechanical trimming B23K26/351 takes precedence
• CPC Class Codes: H05K 2201/0112 Absorbing light, e.g. dielectric layer with carbon filler for laser processing
• CPC Class Codes: H05K 2203/056 Using an artwork, i.e. a photomask for exposing photosensitive layers
• CPC Class Codes: H05K 2203/107 Using laser light shaping a substrate by laser ablation H05K3/0026
• CPC Class Codes: H05K 2203/1383 Temporary protective insulating layer
• CPC Class Codes: H05K 3/027 the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
• CPC Class Codes: H05K 3/181 by electroless plating adhesives therefor H05K3/387
• CPC Class Codes: Y10S 438/94 Laser ablative material removal

Abstract

Selected portions of a thin film coating of metal are removed from an insulative substrate by directing a coherent beam of light energy from a laser at the coating, to heat the coating and cause the evaporation and entrapment of the substrate material at the coating-substrate interface. A positive pressure builds up at the interface resulting in an explosion which removes the coating material.

Claims

1. A method for the removal of a metallic thin film coating from a substrate, comprising the steps of:

directing a beam of radiant energy to heat the thin film coating to a temperature below the melting temperature of the coating material and above the vaporization temperature of the substrate to heat and cause vaporization of the substrate at the thin film-substrate interface; and

entrapping the vapors at said interface to induce an explosion to remove the thin film coating from the substrate.

2. The method as set forth in claim 1, wherein:

the beam of radiant energy is a laser beam.

3. The method as set forth in claim 1, wherein:

the thin film coating is copper and has a thickness between 200 and 500 angstroms and has a melting temperature of 1,083°

C.

4. The method as set forth in claim 3, wherein the substrate has a vaporization temperature of 200°

C.

5. A method of selectively removing portions of a metallic thin film coating from a substrate, comprising the steps of:

placing an apertured, heat resistant mask on the coated substrate;

raster scanning the masked, coated substrate with a coherent laser beam focused at the thin film coating to heat portions of the coating which are exposed through the apertures to a temperature below the melting temperature of the coating material and above the vaporization temperature of the substrate at the thin film-substrate interface; and

entrapping the vapors at said interface to induce an explosion to remove the selected portions of the thin film coating from the substrate.

6. The method of selectively removing portions of a thin film coating from a substrate as set forth in claim 5, which further comprises:

interposing a transparent film between the apertured heat resistant mask and the thin film coating.

7. The method as set forth in claim 5, wherein the thin film coating is copper and has a thickness between 200 and 500 angstroms and has a melting temperature of 1,083°

C.

8. The method as set forth in claim 7, wherein the substrate has a vaporization temperature of 200°

C.

9. A method of fabricating a printed circuit board by selectively removing portions of a metallic thin film coating from an insulative substrate, comprising the steps of:

(a) placing a transparent film over the metallic thin film coating;

(b) further placing a metallic, apertured heat resistant mask on the tranparent film;

(c) raster scanning the mask with a coherent laser beam focused at the metallic thin film coating to heat portions of the coating, which are exposed through the apertures, to a temperature below the melting temperature of the metallic thin film coating and above the vaporization temperature of the dielectric substrate at the metallic thin film-insulative substrate interface; and

(d) entrapping the vapors of the substrate at said interface to induce an explosion to remove the selected portions of the metallic thin film coating from the insulative substrate.

10. The method of fabricating a printed circuit board as set forth in claim 9, wherein:

the metallic thin film is copper having a thickness between 200 and 500 angstroms and has a melting temperature of 1,083°

C; and

the insulative substrate has a vaporization temperature of 200°

C.