×

Voltage detector with field effect transistor and high input impedance

  • US 4,084,134 A
  • Filed: 06/23/1976
  • Issued: 04/11/1978
  • Est. Priority Date: 07/11/1975
  • Status: Expired due to Term
First Claim
Patent Images

1. A voltage detector comrising:

  • a casing of electrically insulating material;

    a probe of electrically conductive metal and having a rear portion inserted in a front portion of the casing and a front portion projecting from the casing;

    a field effect transistor of depletion type having source, gate and drain electrodes, the gate electrode being connected to the rear portion of said probe;

    a transistor having emitter, collector and base, the base being connected to the drain electrode of said field effect transistor;

    a light emitting diode arranged in said casing so that emitted light can be seen from the exterior and connected in series with the emitter-collector path of said transistor;

    a D.C. power source having two terminals connected across a series circuit of the emitter-collector path of the transistor and light emitting diode; and

    high input impedance means connected across said probe and a first junction point between said light emitting diode and said D.C. power source;

    whereby the source electrode of said field effect transistor being connected to a second junction point between said transistor and said light emitting diode so as to bias said field effect transistor substantially in a pinch-off condition by means of a voltage drop produced across said light emitting diode.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×