Voltage detector with field effect transistor and high input impedance
First Claim
1. A voltage detector comrising:
- a casing of electrically insulating material;
a probe of electrically conductive metal and having a rear portion inserted in a front portion of the casing and a front portion projecting from the casing;
a field effect transistor of depletion type having source, gate and drain electrodes, the gate electrode being connected to the rear portion of said probe;
a transistor having emitter, collector and base, the base being connected to the drain electrode of said field effect transistor;
a light emitting diode arranged in said casing so that emitted light can be seen from the exterior and connected in series with the emitter-collector path of said transistor;
a D.C. power source having two terminals connected across a series circuit of the emitter-collector path of the transistor and light emitting diode; and
high input impedance means connected across said probe and a first junction point between said light emitting diode and said D.C. power source;
whereby the source electrode of said field effect transistor being connected to a second junction point between said transistor and said light emitting diode so as to bias said field effect transistor substantially in a pinch-off condition by means of a voltage drop produced across said light emitting diode.
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Accused Products
Abstract
A voltage detector particularly suitable for a portable type lineman'"'"'s detector comprises an electrically insulating casing, a metal probe having a rear portion inserted into the casing and a front portion projected from the casing, a field effect transistor, a gate electrode of which is coupled to the rear portion of the probe, a transistor having a base connected to a drain electrode of the field effect transistor, a light emitting diode connected in series with an emitter-collector path of the transistor, a D.C. battery means connected across a series circuit of the emitter-collector path and the light emitting diode and a high input resistor connected across the probe and a first junction point between the light emitting diode and the D.C. battery means, wherein a source electrode of the field effect transistor is connected to a second junction point between the transistor and the light emitting diode. When the front portion of the probe is made contact with a conductor with or without inserting insulating body therebetween a voltage is induced at the gate electrode of the field effect transistor so as to make conductive the transistor and the light emitting diode produces light which can be seen from the external of the casing.
30 Citations
14 Claims
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1. A voltage detector comrising:
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a casing of electrically insulating material; a probe of electrically conductive metal and having a rear portion inserted in a front portion of the casing and a front portion projecting from the casing; a field effect transistor of depletion type having source, gate and drain electrodes, the gate electrode being connected to the rear portion of said probe; a transistor having emitter, collector and base, the base being connected to the drain electrode of said field effect transistor; a light emitting diode arranged in said casing so that emitted light can be seen from the exterior and connected in series with the emitter-collector path of said transistor; a D.C. power source having two terminals connected across a series circuit of the emitter-collector path of the transistor and light emitting diode; and high input impedance means connected across said probe and a first junction point between said light emitting diode and said D.C. power source;
whereby the source electrode of said field effect transistor being connected to a second junction point between said transistor and said light emitting diode so as to bias said field effect transistor substantially in a pinch-off condition by means of a voltage drop produced across said light emitting diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 14)
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10. A voltage detector comprising a casing of electrically insulating material;
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a probe of electrically conductive metal and having a rear portion inserted in a front portion of the casing and a front portion projected from the casing; a field effect transistor having source, gate and drain electrodes, the gate electrode being connected to the rear portion of the probe; a transistor having emitter, collector and base, the base being connected to the drain electrode of the field effect transistor; a light emitting diode arranged in the casing so that emitted light can be seen from the external and connected in series with the emitter-collector path of the transistor; a D.C. power source having two terminals connected across a series circuit of the emitter-collector path of the transistor and light emitting diode; and high input impedance means connected across the probe and a first junction point between the light emitting diode and the D.C. power source;
the source electrode of the field effect transistor being connected to a second junction point between the transistor and the light emitting diode;an oscillating circuit for producing a signal having a given frequency fM ; a switching device inserted in the series circuit of the D.C. power source, the transistor and the light emitting diode and driven by the signal from the oscillator circuit so as to conduct periodically a D.C. current from the D.C. power source at a repetition frequency of fM ;
whereby the light emitting diode produces flickering light at a beat frequency fI -fM between the repetition frequency fM and a frequency fI of a voltage to be detected.
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11. A voltage detector comprising:
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a casing of electrically insulating material; a probe of electrically conductive metal and having a rear portion inserted in a front portion of the casing and a front portion projected from the casing; a field effect transistor having source, gate and drain electrodes, the gate electrode being connected to the rear portion of the probe; a transistor having emitter, collector and base, the base being connected to the drain electrode of the field effect transistor; a light emitting diode arranged in the casing so that emitted light can be seen from the external and connected in series with the emitter-collector path of the transistor; a D.C. power source having two terminals connected across a series circuit of the emitter-collector path of the transistor and light emitting diode; and high input impedance means connected across the probe and a first junction point between the light emitting diode and the D.C. power source;
the source electrode of the field effect transistor being connected to a second junction point between the transistor and the light emitting diode;a resistor having one end connected to the probe and an electrode provided on an outer surface of the casing and connected to the other end of the high ohmic resistor, whereby when said electrode is touched by a finger of a user the probe is connected to the ground through the high ohmic resistor and an equivalent impedance of the user.
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12. A voltage detector comprising:
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a casing of electrically insulating material; a probe of electrically conductive metal and having a rear portion inserted in a front portion of the casing and a front portion projected from the casing; a field effect transistor having source, gate and drain electrodes, the gate electrode being connected to the rear portion of the probe; a transistor having emitter, collector and base, the base being connected to the drain electrode of the field effect transistor; a light emitting diode arranged in the casing so that emitted light can be seen from the external and connected in series with the emitter-collector path of the transistor; a D.C. power source having two terminals connected across a series circuit of the emitter-collector path of the transistor and light emitting diode; and high input impedance means connected across the probe and a first junction point between the light emitting diode and the D.C. power source;
the source electrode of the field effect transistor being connected to a second junction point between the transistor and the light emitting diode;a pair of electrodes on the casing and feedback means for said field effect transistor connected across said pair of electrodes, whereby when said pair of electrodes are touched by a user'"'"'s finger, the feedback circuit is connected into the circuit so as to decrease the sensitivity of the detection. - View Dependent Claims (13)
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Specification