Inexpensive solar cell and method therefor

• US 4,086,102 A
• Filed: 12/13/1976
• Issued: 04/25/1978
• Est. Priority Date: 12/13/1976
• Status: Expired due to Term

• Current Assignee: William J. King
• Original Assignee: William J. King
• Inventors: King, William J.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US05/749,776
• Time in Patent Office: 498 Days
• Field of Search: 136/89 H, 136/89 SJ, 136/89 CC, 29/572, 29/576 B, 29/580, 29/578, 29/590, 148/1.5, 357/30, 357/90, 357/91, 357/65, 357/72, 357/52, 204/192 SP, 204/192 P, 204/192 D, 204/192 C
• US Class Current: 136/256
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1828 the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: Y02E 10/543 Solar cells from Group II-VI materials
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 148/033 Diffusion of aluminum
• CPC Class Codes: Y10S 148/153 Solar cells-implantations-laser beam

Abstract

Solar cells are manufactured by a simplified method in which a single protective layer acts as an anti-reflection coating and an encapsulation. In cases where the junction is formed by ion implantation techniques, the same layer also serves as the implantation oxide. In addition, this multi-purpose layer may also serve as a mass analyzer, allowing the desired species of ions to reach the surface of the semiconductor but blocking the heavier undesired species. The necessary contacts may be formed prior to implantation, and the use of alloyed aluminum contacts with aluminum oxide passivation permits a simplified contacting procedure. A fully automatic contacting method and configuration for linear materials is also disclosed.

Claims

1. A solar cell comprising a semi-conductor device including a rectifying junction and having a front surface, electrically conductive members in contact with said surface, and a layer of hermetic material hermetically bonded to said front surface and to at least as much of the edge surfaces as is necessary to cover said junction, thereby protecting said junction, said material having an index of refraction and a thickness approximating theoretically calculated values for perfect antireflective [(AR)] coating.

2. The solar cell of claim 1 wherein said hermetic material has an index of refraction which is approximately equal to the square root of the index of refraction of the front surface material.

3. The solar cell of claim 1 wherein said device includes a substrate selected from the group consisting of silicon and CdS and wherein said hermetic material is selected from the group consisting of Al₂ O₃, Si₃ N₄ and SnO₂.

4. The solar cell of claim 1 wherein the front surface has been doped by implanting ions of an impurity element adapted to produce a P-N junction.

5. Method of making a solar cell comprising the following steps in the order given:

(a) applying electrically conductive contacts on the front surface of a semiconductive substrate of given conductivity type;

(b) putting down in hermetic form upon said surface a thin layer of combined antireflective and protective material, said layer having an index of refraction and thickness approximating theoretically calculated values for perfect antireflective coating;

(c) implanting ions of an impurity element of opposite conductivity type through said layer and into said surface of the substrate so as to produce a P-N junction therein;

(d) heating the substrate with its contacts at least to a temperature high enough so that radiation damage due to step (c) is substantially annealed and said contacts alloy with the substrate.

6. Method of making a solar cell having a semiconductive substrate of given conductivity type comprising depositing in hermetic form upon said front surface and to at least as much of the edge surfaces of said substrate as is necessary to cover the P-N junction to be subsequently formed, a protective layer of a material and thickness which result in effective antireflective properties and thereafter implanting ions of an impurity element of opposite conductivity type through said layer and into said substrate so as to produce said P-N junction therein.

7. Method of making a solar cell according to claim 6 wherein the step of implanting ions through said layer and into said substrate is carried out in the presence of an edge mask over an edge of the substrate.

8. Method of making a solar cell according to claim 6 wherein the step of implanting ions is carried out at an ion implantation energy such that the most probable depth of ion penetration lies at or near the interface of said front surface and said layer.

9. Method of making a solar cell according to claim 6 wherein the step of depositing said layer is carried out by means of ion beam sputtering.

10. Method of making solar cells according to claim 6 wherein aluminum contact members are applied to said surface prior to the step of depositing said layer, wherein said layer is Al₂ O₃, wherein said substrate is N-type silicon, and wherein, after the step of implanting ions, the substrate with its contact members and layer are heated at least to the temperature at which said contact members alloy with said silicon substrate.

11. Method of making a solar cell according to claim 10 wherein the step of applying aluminum contact members comprises ion beam sputtering aluminum onto the silicon substrate through masking means.

12. Method of making a solar cell according to claim 6 wherein said step of implanting impurity element ion is carried out by passing an accelerated ion beam through an electrostatic analyzer, and wherein said layer is put down in a thickness sufficient to absorb a substantial amount of at least one species of the ions in said ion beam while permitting said ions to reach the surface of said substrate.

13. Method of making a solar cell comprising the following steps performed in the order given with the exception of step (d) which can be done at any time before step (e):

(a) applying first electrically conductive contacts on a first surface of a semiconductive substrate of given conductivity type;

(b) putting down in hermetic form upon said first surface a thin layer of combined antireflective and protective material;

said layer having an index of refraction and thickness approximating the retically calculated values for perfect antireflective coating.

(c) implanting ions of an impurity element of opposite conductivity type through said layer and into said first surface of the substrate so as to produce a P-N junction therein;

(d) applying second electrically conductive contacts on a second surface of the substrate;

(e) heating the substrate with its first and second contacts at least to a temperature high enough so that radiation damage due to step (c) is substantially annealed and both first and second contacts alloy with the substrate.

14. Method of making a solar cell comprising implanting ions of an impurity element of given conductivity type into the front surface of a semiconductive substrate of opposite conductivity type so as to produce a P-N junction therein and thereafter putting down in hermetic form upon said surface and to at least as much of the edge surfaces as is necessary to cover said junction so as to protect said junction a layer of combined antireflective and protective material.

15. Method of making contacts to a semiconductor junction comprising applying masked aluminum upon one surface of an N-type substrate, implanting P-forming ions into said surface, putting down in hermetic form upon said surface a thin layer of Al₂ O₃, and heat treating, the assembly.

16. Method of making a solar cell comprising applying conductive contacts on one surface of an n-type silicon substrate, coating said surface with a film of aluminum sufficiently thin to permit adequate light penetration, putting down in hermetic form upon said coating a thin layer of Al₂ O₃, and heat treating the total structure at a temperature high enough to alloy said aluminum into said silicon substrate.