Insulating film, sheet, or plate material with metallic coating and method for manufacturing same

• US 4,091,138 A
• Filed: 02/04/1976
• Issued: 05/23/1978
• Est. Priority Date: 02/12/1975
• Status: Expired due to Term

• Current Assignee: Sumitomo Bakelite Company Limited, Toshinori Takagi
• Original Assignee: Sumitomo Bakelite Company Limited, Toshinori Takagi
• Inventors: Takagi, Toshinori, Nishiyama, Tatsuichiro, Uchida, Unosuke
• Primary Examiner(s): Kendall, Ralph S.
• Application Number:
  US05/655,233
• Time in Patent Office: 839 Days
• Field of Search: 427/13, 427/27, 427/250, 427/251, 427/99, 427/124, 427/89, 427/90, 427/91, 204/192 C, 204/192 SP, 174/68.5, 428/209, 428/458, 428/461, 428/457, 428/460
• US Class Current: 428/209
• CPC Class Codes: C23C 14/02 Pretreatment of the material to be coated C23C14/04 takes precedence
• CPC Class Codes: C23C 14/32 by explosion; by evaporation and subsequent ionisation of the vapours , e.g. ion-platingC23C14/34 - C23C14/48 take precedence
• CPC Class Codes: H01B 13/0026 Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
• CPC Class Codes: H05K 3/146 By vapour deposition
• CPC Class Codes: Y10S 148/025 Deposition multi-step
• CPC Class Codes: Y10S 148/045 Electric field
• CPC Class Codes: Y10S 148/169 Vacuum deposition, e.g. including molecular beam epitaxy
• CPC Class Codes: Y10S 174/33 Method of cable manufacture, assembly, repair, or splicing
• CPC Class Codes: Y10T 428/24917 including metal layer
• CPC Class Codes: Y10T 428/31681 Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]

Abstract

This invention provides a method for forming a dense, electrically conductive, metallic coating having a sufficient adherence without use of an adhesive on an insulating film, sheet, or plate such as plastic film, plastic rigid sheet, or ceramics by the cluster ion plating procedure which comprises heating a crucible containing a vapor deposition metal at a temperature of 200° to 2,500° C in a vacuum of 1 × 10^-4 Torr. to 1 × 10^-7 Torr. to generate a metal cluster through a small hole of the crucible, ionizing the metal cluster by the impact of electrons, and electrostatically accelerating the resulting cluster ion and depositing the same on a base material; a method for directly forming an electric circuit on the base material without use of adhesive according to the above-said method, wherein the base material is covered with a mask in the sheet form; and a method for efficiently increasing the thickness of the metallic coatings formed by the above methods, by further deposition of a metal by a vacuum deposition procedure or by an ion plating procedure similar to the said cluster ion plating, except that the crucible has an ejecting hole of a larger diameter so that practically the cluster is no more formed. The invention also provides the products manufactured by the above methods.

Claims

1. A coated material comprising an insulating substrate of polyester of polyimide having on at least one surface a metallic copper coating deposited from the vapor phase by cluster ion plating, said plating being obtained by

(1) providing a small hole on the top of a crucible containing the copper to be deposited, the diameter of the hole being 1 to 30% of the inner diameter of the crucible,

(2) heating the crucible under vacuum to a temperature at which said copper is sufficiently vaporized to eject the copper vapor from said small hole, thereby forming clusters each being an aggregate of about 1,000 metal atoms,

(3) allowing electrons, generated from a red-hot ionizing heater separately provided by applying a DC voltage between the heater and an ionizing anode, to collide against the clusters, thereby ionizing some of the clusters, and

(4) accelerating the ionized clusters by applying a DC voltage sufficiently high to increase adherence of the clusters to the substrate, said accelerating voltage being applied between the ionizing anode and an extraction-electrode, thereby depositing the accelerated ionized clusters together with un-ionized clusters on the insulating substrate.

2. The coated material according to claim 1, wherein the thickness of the metallic coating deposited by the cluster ion plating is increased further by vapordeposition or sputtering of a metal.

3. The coated material according to claim 2, wherein the metal for vapor-deposition or sputtering is the same as that of the metallic coating deposited by the cluster ion plating method.

4. The coated material according to claim 1, wherein the metallic coating constitutes a printed circuit obtained by etching the metallic coating to remove the unnecessary part thereof or directly obtained by a masking method during the deposition.

5. The coated material according to claim 4, wherein the thickness of the metallic coating constituting a printed circuit is increased further by vapordeposition or sputtering of a metal.

6. The coated material according to claim 5, wherein the metal for vapor deposition or sputtering is the same as that of the metallic coating.

7. A method for manufacturing a coated substrate which comprises depositing a metallic coating from the vapor phase on at least one surface of an insulating substrate by a cluster ion plating method comprising the steps of

(1) providing a small hole on top of a crucible containing a metal to be plated, the diameter of the hole being 1 to 30% of the inner diameter of the crucible,

(2) heating the crucible under a vacuum of 1 ×

10^-4 to 1 ×

10^-7 Torr to a temperature at which said metal is sufficiently vaporized to eject the metal vapor from said small hole, thereby forming clusters each being an aggregate of about 1,000 metal atoms, (3) applying a DC voltage of 10 to 1,000 V between a red-hot ionizing heater provided separately and an ionizing anode to cause an electron current of 10 mA to flow therebetween, thereby generating electrons and allowing the electrons to collide against the clusters to ionize some of the clusters, and (4) applying a DC voltage of 10 to 3,000 V between the ionizing anode and an extraction electrode to accelerate the ionized cluster so that the ion density on the insulating substrate becomes 0.1 μ

A/cm² to several mA/cm² to deposit the ionized clusters together with un-ionized clusters on the insulating substrate.

8. The method for manufacturing a coated substrate according to claim 7, wherein the thickness of the metallic coating is increased further by vapor deposition or sputtering of a metal.

9. The method for manufacturing a coated substrate according to claim 7, wherein the metallic coating constitutes a printed circuit obtained by etching the metallic coating to remove the unnecessary part thereof or directly obtained by a masking method, during the deposition.

10. The method for manufacturing a coated substrate according to claim 9, wherein the thickness of the metallic coating constituting the printed circuit is increased further by vapor deposition or sputtering a metal.

11. The method for manufacturing a coated substrate according to claim 7, wherein the substrate is a thermoplastic resin film having a melting point of 80°

C or more, a dielectric breakdown voltage of 200 V or more per 50 μ

in thickness, a water absorption of 5% or less after immersion in water at 20°

C for 24 hrs, and a heat-shrinkage of 10% or less after treatment at 80°

C for 2 hrs.