Surge current protection circuit

• US 4,091,434 A
• Filed: 10/12/1976
• Issued: 05/23/1978
• Est. Priority Date: 10/16/1975
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Wachi, Shigeaki, Suzuki, Tadao
• Primary Examiner(s): Moose, Jr., Harry E.
• Application Number:
  US05/731,766
• Time in Patent Office: 588 Days
• Field of Search: 330/15, 330/207 P, 363/15-31, 363/45, 363/46, 363/49, 363/52, 363/53, 361/15, 361/100, 361/111
• US Class Current: 361/100
• CPC Class Codes: H02H 11/006 in case of too high or too low voltage
• CPC Class Codes: H02H 3/08 responsive to excess current responsive to abnormal temperature caused by excess current H02H5/04
• CPC Class Codes: H02H 7/12 for static converters or rectifiers for discharge lamp power supplies using static converters H05B41/2851, H05B41/2921, H05B41/2981
• CPC Class Codes: H02H 9/005 avoiding undesired transient conditions
• CPC Class Codes: H03F 1/52 Circuit arrangements for protecting such amplifiers monitoring arrangements G01R31/28; increasing reliability in communication systems, e.g. using redundancy H04B1/74

Abstract

A surge current protection circuit includes an input terminal supplied with a rectified alternating voltage, an output terminal to be connected to a load, and a semiconductor controlled rectifier having its anode and cathode electrodes connected in series between the input and output terminals. The collector and emitter electrodes of a control transistor are connected between the gate and cathode electrodes of the rectifier. The base-emitter voltage is supplied with any sharp transients, and the transistor becomes conductive before the rectifier if the transients are sharp enough and of high enough amplitude. Conduction of the transistor prevents the semiconductor controlled rectifier from conducting surge currents and protects circuits connected in series with the rectifier.

Claims

1. A surge current protection circuit comprising an input terminal supplied with a rectified voltage, an output terminal to be connected to a load, a semiconductor controlled rectifier comprising gate, anode, and cathode electrodes, the anode and cathode electrodes being connected in series between said input and output terminals, and triggering means connected between said input and output terminals to supply a trigger voltage to the gate electrode of said semiconductor controlled rectifier, said triggering means comprising:

a first resistor connected in series between the gate and anode electrodes of said semiconductor controlled rectifier to supply a trigger voltage to said gate;

a transistor having base, emitter, and collector electrodes, the collector and emitter electrodes of said transistor being connected in series between the gate and cathode electrodes of said semiconductor controlled rectifier; and

biasing means comprising a series circuit connected between said input and output terminals for applying a bias voltage to the base electrode of said transistor, said series circuit comprising second and third resistors, said third resistor being connected between the base and emitter electrodes of said transistor, and said bias voltage across said third resistor being larger than the trigger voltage of said semiconductor controlled rectifier so as not to allow said semiconductor controlled rectifier to conduct when the voltage difference between said input and output terminals exceeds a predetermined value.

2. A surge current protection circuit according to claim 1 further comprising a speed-up capacitor connected in series between said input terminal and the base electrode of said transistor.

3. A surge current protection circuit according to claim 1 in which the resistance value of said second and third resistors is determined by the following equation:

space="preserve" listing-type="equation">V.sub.GK <

(R.sub.2 + R.sub.3 /R.sub.3) ×

V.sub.BE

wherein R₂ and R₃ indicate resistance values of the second and third resistors, respectively, V_BE indicates the voltage between the base and emitter electrodes of said transistor and V_GK indicates the gate trigger voltage of said silicon controlled rectifier.

4. A surge current protection circuit according to claim 3 further comprising a rectifier circuit and a filter capacitor, said rectifier, the anode-cathode circuit of said semiconductor controlled rectifier, and said capacitor being in series to form a closed loop.

5. A surge current protection circuit according to claim 4 further comprising a DC-DC converter the input terminals of which are connected across said capacitor.

6. A surge current protection circuit according to claim 5 in which said DC-DC converter comprises a transformer that comprises a primary winding, said circuit further comprising detecting means for detecting a current flowing through said primary winding and producing a control signal proportional to said current, said detecting means being connected to said transistor to apply a control signal to the base of said transistor so as to cause said transistor to conduct when the current flowing through the primary winding exceeds a predetermined value.

7. A surge current protection circuit according to claim 6 in which said detecting means comprises a detecting coil provided in connection with the primary winding of said DC-DC converter, a rectifiying circuit supplied with an output signal from said detecting coil, the output of said rectifying circuit being applied to the base of said transistor.

8. A surge current protection circuit according to claim 5 further comprising an amplifier connected to said DC-DC converter, and an overload detecting circuit for detecting an overload state of said amplifier and having an output terminal coupled to the base of said transistor so as to cause said transistor to conduct when an overload state is present in said amplifier.

9. A surge current protection circuit according to claim 8 in which said amplifier comprises a push-pull transistor amplifier and a load therefor, and said overload detecting circuit detects an overload state of said push-pull amplifier by comparing the load current flowing through at least one transistor of said push-pull amplifier and the voltage across a load connected to the output of said push-pull transistor amplifier.