Electroluminescent semiconductor device with passivation layer

• US 4,095,011 A
• Filed: 06/21/1976
• Issued: 06/13/1978
• Est. Priority Date: 06/21/1976
• Status: Expired due to Term

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Kressel, Henry, Hawrylo, Frank Zygmunt
• Primary Examiner(s): Ives, P. C.
• Application Number:
  US05/698,482
• Time in Patent Office: 722 Days
• Field of Search: 428/538, 428/913, 428/539, 428/469, 428/472, 427/74, 148/171, 357/2, 357/23, 357/52, 357/17
• US Class Current: 428/469
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01S 5/0281 Coatings made of semiconductor materials
• CPC Class Codes: H01S 5/0282 Passivation layers or treatments
• CPC Class Codes: Y10S 428/913 Material designed to be responsive to temperature, light, moisture
• CPC Class Codes: Y10S 428/917 Electroluminescent
• CPC Class Codes: Y10S 438/958 Passivation layer

Abstract

A semiconductor device has a body of a semiconductor material wherein arsenic, As, is a constituent component of the material. A passivation layer of a material selected from the group consisting of arsenic sulfide, As₂ S₃, arsenic selenide, As₂ Se₃, and arsenic telluride, As₂ Te₃, is on surfaces of the body.

Claims

1. An electroluminescent semiconductor device comprising:

a body of III-V semiconductor material having as a constituent component arsenic, said body having a first surface, a second surface opposite said first surface, side surfaces substantially perpendicular to said first and second surfaces, said body being capable of emitting electroluminescence from at least one of said side surfaces, and

a passivation layer on at least said emission surfaces, said passivation layer being of a material selected from the group consisting of arsenic sulfide, As₂ S₃, arsenic selenide, As₂ Se₃, and arsenic telluride, As₂ Te₃.

2. The electroluminescent semiconductor device in accordance with claim 1 wherein said arsenic component of said body provides a portion of the arsenic composition of said passivation layer.

3. The electroluminescent semiconductor device in accordance with claim 2 wherein said passivation layer is on all of the side surfaces.

4. The electroluminescent semiconductor device in accordance with claim 3 wherein said body has a plurality of layers.