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Nonreflecting photoresist process

  • US 4,102,683 A
  • Filed: 02/10/1977
  • Issued: 07/25/1978
  • Est. Priority Date: 02/10/1977
  • Status: Expired due to Term
First Claim
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1. An improved photolithographic method for defining a pattern of a photoresist layer which overlies a material, said photoresist layer being sensitive to light of a particular peak wavelength, the method being of the type which includes the step of exposing said photosensitive layer to a pattern of light having a frequency distribution which includes said peak wavelength, wherein the improvement comprises:

  • applying a light absorbing layer comprising a fluorescent dye selected to absorb light of said particular peak wavelength and to emit light of a different wavelength which said photoresist layer is not sensitive to between said material and said photoresist layer prior to said step of exposing whereby light of said particular peak wavelength which passes through said photoresist layer during said step of exposing will be absorbed by said light absorbing layer and not reflected back into said photoresist layer.

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