Solar cells having integral collector grids

• US 4,104,084 A
• Filed: 06/06/1977
• Issued: 08/01/1978
• Est. Priority Date: 06/06/1977
• Status: Expired due to Term

• Current Assignee: United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
• Original Assignee: United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
• Inventors: Evans, John C. Jr.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US05/803,823
• Time in Patent Office: 421 Days
• Field of Search: 136/89 CC, 136/89 SJ, 357/15, 357/16, 357/30, 357/65, 357/67
• US Class Current: 136/256
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/07 the potential barriers being only of the Schottky type
• CPC Class Codes: H01L 31/072 the potential barriers being only of the PN heterojunction type
• CPC Class Codes: H01L 31/074 comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/184 the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 148/153 Solar cells-implantations-laser beam

Abstract

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means convering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Claims

1. A heterojunction or Schottky barrier solar cell which comprises;

a heterojunction or Schottky barrier device, each having opposed upper and lower surfaces;

a conductive base metal layer compatible with and coating predominantly the lower surface of the substrate of each said device such that a back surface field region is formed at the interface between each said device and said base metal layer;

a transparent, conductive mixed metal oxide layer in integral contact with the upper surface of said heterojunction device or said Schottky barrier device and having a metal alloy grid network composed of the same metal elements as the oxide constituents of said mixed metal oxide layer, said network being embedded in said mixed metal oxide layer;

an insulating layer which prevents electrical contact between said conductive metal base layer and said transparent conductive metal oxide layer; and

a metal contact means covering said insulating layer and in intimate contact with said metal grid network embedded in said transparent oxide layer for conducting electrons generated by the photovoltaic process from said device.

2. The solar cell of claim 1, wherein said heterojunction device is a p-type silicon substrate in contact with an n-type transparent, semiconductive oxide layer of SnO₂ or a mixture of In₂ O₃ and SnO₂.

3. The solar cell of claim 1, wherein said mixed metal oxide layer ranges from 500 A to 10μ

m thick.

4. The solar cell of claim 1, wherein said conductive metal base layer is aluminum.

5. The solar cell of claim 1, wherein said conductive metal base layer is 3μ

m to 5μ

m thick.

6. The solar cell of claim 1, wherein said transparent, conductive mixed metal oxide layer is a mixture of In₂ O₃ -SnO₂.

7. The solar cell of claim 6, wherein said conductive metal grid network is an In-Sn alloy.

8. The solar cell of claim 7, wherein said metal grid network ranges in depth from 500 A to 10μ

m in said conductive mixed metal oxide layer.

9. The solar cell of claim 1, wherein said insulating layer is formulated of SiO₂.

10. The solar cell of claim 1, wherein said metal contact means is of silver, gold, titanium-silver, chromium-copper or manganese-silver.

11. The solar cell of claim 1, wherein said heterojunction device has a CdS-Cu₂ S, Si-GaP, CdSe-Cu₂ S, GaAs-ZnSe or GaAs-SnO₂ structure.

12. The solar cell of claim 1, wherein said Schottky barrier device has an Si-Au, Si-Pt, GaAs-Au, GaAs-Al, GaAs-Ag or Si-Ag structure.

13. A Schottky barrier or heterojunction solar cell which comprises:

a heterojunction or Schottky barrier device, each having opposed upper and lower surfaces;

a conductive metal base layer on the lower surface of the substrate of each said device such that a back surface field region is formed at the interface between each said device and said metal base layer;

a transparent, conductive mixed metal oxide layer in integral contact with the upper surface of said device;

a metal alloy grid network embedded within the mixed metal oxide layer, said metal alloy grid network being composed of the same metal elements of the oxide constituents of said mixed metal oxide layer;

an insulating layer between said conductive metal base layer and said transparent conductive metal oxide layer; and

a wraparound metal conductor which coats said insulating layer thereby providing a conductive metal collector for said embedded alloy grid network.

14. The solar cell of claim 13 wherein said heterojunction device is an n-type transparent, semiconductive layer of SnO₂ or a mixture of SnO₂ and In₂ O₃ on a p-type Si substrate.

15. The solar cell of claim 13, wherein said conductive base metal layer is aluminum of a thickness ranging from 3μ

m to 5μ

m.

16. The solar cell of claim 14, wherein said insulating layer is SiO₂.

17. The solar cell of claim 13, wherein said metal alloy grid network is indium-tin or indium-antmony and wherein said metal alloy grid is of a thickness ranging from 500A to 10μ

M.

18. The solar cell of claim 13, wherein said heterojunction device has a CdS-Cu₂ S, Si-GaP, CdSe-Cu₂ S, GaAs-ZnSe or GaAs-SnO₂ structure.

19. The solar cell of claim 13, wherein said Schottky barrier device has an Si-Au, Si-Pt, GaAs-Au, GaAs-Al, GaAs-Ag or Si-Ag structure.